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  • Manufacturer No:
    SIS412DN-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    352226
  • Description:
    MOSFET 30V 12A 15.6W
  • Quantity:
      • RFQ
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  • Material flow:
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Inventory:70635
  • Qty Unit Price price
  • 1 $828.324 $828.324
  • 10 $820.122 $8201.22
  • 100 $812.001 $81200.1
  • 1000 $803.961 $803961
  • 10000 $796 $7960000

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  • Manufacturer No:
    SIS412DN-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SIS412DN-T1-GE3
  • SKU:
    352226
  • Description:
    MOSFET 30V 12A 15.6W

SIS412DN-T1-GE3 Details

MOSFET 30V 12A 15.6W

SIS412DN-T1-GE3 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Pin Count: 8
  • Published: 2013
  • Number of Terminations: 5
  • Max Junction Temperature (Tj): 150°C
  • REACH SVHC: Unknown
  • Gate to Source Voltage (Vgs): 20V
  • Operating Temperature: -55°C~150°C TJ
  • Terminal Finish: MATTE TIN
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Subcategory: FET General Purpose Power
  • Width: 3.05mm
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Rise Time: 12 ns
  • Vgs(th) (Max) @ Id: 2.5V @ 250μA
  • Resistance: 24mOhm
  • Current - Continuous Drain (Id) @ 25°C: 12A Tc
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Power Dissipation: 15.6W
  • JESD-30 Code: S-XDSO-C5
  • Rds On (Max) @ Id, Vgs: 24m Ω @ 7.8A, 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Number of Pins: 8
  • Terminal Position: DUAL
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 40
  • Factory Lead Time: 14 Weeks
  • Transistor Element Material: SILICON
  • Drain to Source Breakdown Voltage: 30V
  • Threshold Voltage: 1V
  • FET Type: N-Channel
  • Pulsed Drain Current-Max (IDM): 30A
  • Operating Mode: ENHANCEMENT MODE
  • Terminal Form: C BEND
  • Case Connection: DRAIN
  • Length: 3.05mm
  • Fall Time (Typ): 10 ns
  • Turn-Off Delay Time: 15 ns
  • Turn On Delay Time: 5 ns
  • Series: TrenchFET?
  • Nominal Vgs: 1 V
  • Continuous Drain Current (ID): 8.7A
  • Height: 1.17mm
  • Package / Case: PowerPAK? 1212-8
  • Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
  • Power Dissipation-Max: 3.2W Ta 15.6W Tc

Excellent

Based on reviews

Excellent

Based on reviews

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