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  • Manufacturer No:
    SI9933BDY-T1-E3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    Get the PDF file
  • SKU:
    352396
  • Description:
    MOSFET 2P-CH 20V 3.6A 8-SOIC
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  • Manufacturer No:
    SI9933BDY-T1-E3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    SI9933BDY-T1-E3
  • SKU:
    352396
  • Description:
    MOSFET 2P-CH 20V 3.6A 8-SOIC

SI9933BDY-T1-E3 Details

MOSFET 2P-CH 20V 3.6A 8-SOIC

SI9933BDY-T1-E3 Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Number of Elements: 2
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Lead Free: Lead Free
  • Part Status: Obsolete
  • Gate to Source Voltage (Vgs): 12V
  • Element Configuration: Dual
  • Length: 5mm
  • Width: 4mm
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • Height: 1.55mm
  • Turn-Off Delay Time: 45 ns
  • Continuous Drain Current (ID): 3.6A
  • Drain to Source Breakdown Voltage: -20V
  • Turn On Delay Time: 22 ns
  • Power Dissipation: 1.1W
  • Supplier Device Package: 8-SO
  • Weight: 186.993455mg
  • Rds On Max: 60 mΩ
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Number of Channels: 2
  • Mount: Surface Mount
  • Radiation Hardening: No
  • Min Operating Temperature: -55°C
  • Number of Pins: 8
  • Max Operating Temperature: 150°C
  • Published: 2009
  • Drain to Source Voltage (Vdss): 20V
  • Operating Temperature: -55°C~150°C TJ
  • Fall Time (Typ): 35 ns
  • Rise Time: 35ns
  • Drain to Source Resistance: 60mOhm
  • Current - Continuous Drain (Id) @ 25°C: 3.6A
  • FET Feature: Logic Level Gate
  • Max Power Dissipation: 1.1W
  • Power - Max: 1.1W
  • FET Type: 2 P-Channel (Dual)
  • Vgs(th) (Max) @ Id: 1.4V @ 250μA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
  • Base Part Number: SI9933

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