SUD40N10-25-E3Vishay Siliconix
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    • Manufacturer No：
      SUD40N10-25-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      356795
    • Description：
      Trans MOSFET N-CH 100V 40A 3-Pin(2+Tab) DPAK
    • Quantity：
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    Inventory:2351
    • Qty Unit Price price
    • 1 $501.574 $501.574
    • 10 $496.607 $4966.07
    • 100 $491.69 $49169
    • 1000 $486.821 $486821
    • 10000 $482 $4820000

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    • Manufacturer No：
      SUD40N10-25-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SUD40N10-25-E3
    • SKU：
      356795
    • Description：
      Trans MOSFET N-CH 100V 40A 3-Pin(2+Tab) DPAK

    User Guide

    User Guide

    SUD40N10-25-E3 Details

    Trans MOSFET N-CH 100V 40A 3-Pin(2+Tab) DPAK

    SUD40N10-25-E3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Pins: 3
    • REACH SVHC: No SVHC
    • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
    • Time@Peak Reflow Temperature-Max (s): 30
    • Published: 2014
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • FET Type: N-Channel
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • JESD-30 Code: R-PSSO-G2
    • Subcategory: FET General Purpose Power
    • Turn-Off Delay Time: 15 ns
    • Turn On Delay Time: 8 ns
    • Pulsed Drain Current-Max (IDM): 70A
    • Series: TrenchFET?
    • JEDEC-95 Code: TO-252AA
    • Current - Continuous Drain (Id) @ 25°C: 40A Tc
    • Avalanche Energy Rating (Eas): 80 mJ
    • Power Dissipation-Max: 3W Ta 136W Tc
    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Mount: Surface Mount
    • Number of Elements: 1
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Pin Count: 4
    • Terminal Form: GULL WING
    • Peak Reflow Temperature (Cel): 260
    • Drain to Source Breakdown Voltage: 100V
    • Threshold Voltage: 3V
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Power Dissipation: 3W
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Continuous Drain Current (ID): 40A
    • Case Connection: DRAIN
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Resistance: 25mOhm
    • Rise Time: 40 ns
    • Vgs(th) (Max) @ Id: 3V @ 250μA
    • Fall Time (Typ): 80 ns
    • Nominal Vgs: 3 V
    • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
    • Rds On (Max) @ Id, Vgs: 25m Ω @ 40A, 10V
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