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- Manufacturer No：IRF630
- Manufacturer：Harris Corporation
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF630
- SKU：3619789
- Description：N-Channel 200 V 9A (Tc) Through Hole TO-220AB
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User Guide
IRF630 Details
N-Channel 200 V 9A (Tc) Through Hole TO-220AB
IRF630 Specification Parameters
- Series: -
- Mounting Type: Through Hole
- Package: Tube
- Technology: MOSFET (Metal Oxide)
- Supplier Device Package: TO-220AB
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Mfr: Harris Corporation
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
- FET Feature: -
- Part Status: Obsolete
- FET Type: N-Channel
- Package / Case: TO-220-3
- Category: Discrete Semiconductor Products/Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss): 200 V
- Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
- Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
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