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NTD4865N-35G123
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NTD4865N-35G
  • Manufacturer No:
    NTD4865N-35G
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    NTD4865N-35G
  • SKU:
    3623315
  • Description:
    N-Channel 25 V 8.5A (Ta), 44A (Tc) 1.27W (Ta), 33.3W (Tc) Through Hole I-PAK

NTD4865N-35G Details

N-Channel 25 V 8.5A (Ta), 44A (Tc) 1.27W (Ta), 33.3W (Tc) Through Hole I-PAK

NTD4865N-35G Specification Parameters

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • RoHS Status: RoHS Compliant
  • Pbfree Code: yes
  • Lead Free: Lead Free
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Packaging: Tube
  • Number of Pins: 3
  • Qualification Status: Not Qualified
  • Published: 2009
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature: -55°C~175°C TJ
  • Vgs (Max): ±20V
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Drain Current-Max (Abs) (ID): 8.5A
  • Subcategory: FET General Purpose Powers
  • Continuous Drain Current (ID): 44A
  • Package / Case: TO-251-3 Stub Leads, IPak
  • Pulsed Drain Current-Max (IDM): 87A
  • Turn-Off Delay Time: 17.4 ns
  • Drain-source On Resistance-Max: 0.0109Ohm
  • Rds On (Max) @ Id, Vgs: 10.9m Ω @ 30A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 827pF @ 12V
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Part Status: Obsolete
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Number of Terminations: 3
  • Pin Count: 3
  • Drain to Source Breakdown Voltage: 25V
  • Terminal Finish: Tin (Sn)
  • Element Configuration: Single
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Case Connection: DRAIN
  • Vgs(th) (Max) @ Id: 2.5V @ 250μA
  • Fall Time (Typ): 19 ns
  • Power Dissipation: 1.92W
  • Lifecycle Status: LAST SHIPMENTS (Last Updated: 4 days ago)
  • Rise Time: 19ns
  • Avalanche Energy Rating (Eas): 50 mJ
  • Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 4.5V
  • Power Dissipation-Max: 1.27W Ta 33.3W Tc
  • Current - Continuous Drain (Id) @ 25°C: 8.5A Ta 44A Tc

ON Semiconductor — Manufacturer Introduction

ON Semiconductor
ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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