RFD3055LESM9AHarris Corporation
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    • Manufacturer No：
      RFD3055LESM9A
    • Manufacturer：
      Harris Corporation
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
    • SKU：
      3633715
    • Description：
      N-Channel 60 V 11A (Tc) 38W (Tc) Surface Mount TO-252AA
    • Quantity：
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    Inventory:2163
    • Qty Unit Price price
    • 1 $0.792 $0.792
    • 10 $0.784 $7.84
    • 100 $0.776 $77.6
    • 1000 $0.768 $768
    • 10000 $0.76 $7600

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    • Manufacturer No：
      RFD3055LESM9A
    • Manufacturer：
      Harris Corporation
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      RFD3055LESM9A
    • SKU：
      3633715
    • Description：
      N-Channel 60 V 11A (Tc) 38W (Tc) Surface Mount TO-252AA

    User Guide

    User Guide

    RFD3055LESM9A Details

    N-Channel 60 V 11A (Tc) 38W (Tc) Surface Mount TO-252AA

    RFD3055LESM9A Specification Parameters

    • Package: Bulk
    • FET Feature: -
    • Part Status: Obsolete
    • FET Type: N-Channel
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Category: Discrete Semiconductor Products/Transistors - FETs, MOSFETs - Single
    • Drain to Source Voltage (Vdss): 60 V
    • Supplier Device Package: TO-252AA
    • Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
    • Power Dissipation (Max): 38W (Tc)
    • Rds On (Max) @ Id, Vgs: 107mOhm @ 8A, 5V
    • Series: -
    • Mounting Type: Surface Mount
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Mfr: Harris Corporation
    • Vgs(th) (Max) @ Id: 3V @ 250μA
    • Vgs (Max): ±16V
    • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
    • Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
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