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- Manufacturer No：FQP55N06
- Manufacturer：Fairchild Semiconductor
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：FQP55N06
- SKU：3635818
- Description：N-Channel 60 V 55A (Tc) 133W (Tc) Through Hole TO-220-3
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User Guide
FQP55N06 Details
N-Channel 60 V 55A (Tc) 133W (Tc) Through Hole TO-220-3
FQP55N06 Specification Parameters
- FET Feature: -
- Part Status: Obsolete
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Technology: MOSFET (Metal Oxide)
- Supplier Device Package: TO-220-3
- Operating Temperature: -55°C ~ 175°C (TJ)
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Series: QFET?
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1.69 pF @ 25 V
- Power Dissipation (Max): 133W (Tc)
- Mounting Type: Through Hole
- Package: Tube
- FET Type: N-Channel
- Package / Case: TO-220-3
- Mfr: Fairchild Semiconductor
- Category: Discrete Semiconductor Products/Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss): 60 V
- Vgs (Max): ±25V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 27.5A, 10V
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