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  • Manufacturer No:
    2N6426G
  • Manufacturer:
  • Category:
    Transistors - Bipolar (BJT) - Single
  • Datasheet:
  • SKU:
    3642937
  • Description:
    Bipolar (BJT) Transistor NPN - Darlington 40 V 500 mA - 625 mW Through Hole TO-92 (TO-226)
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  • Manufacturer No:
    2N6426G
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - Bipolar (BJT) - Single
  • Datasheet:
    2N6426G
  • SKU:
    3642937
  • Description:
    Bipolar (BJT) Transistor NPN - Darlington 40 V 500 mA - 625 mW Through Hole TO-92 (TO-226)

2N6426G Details

Bipolar (BJT) Transistor NPN - Darlington 40 V 500 mA - 625 mW Through Hole TO-92 (TO-226)

2N6426G Specification Parameters

  • Surface Mount: NO
  • Packaging: Bulk
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Part Status: Obsolete
  • Number of Pins: 3
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 40
  • Transistor Element Material: SILICON
  • Terminal Position: BOTTOM
  • Collector Emitter Breakdown Voltage: 40V
  • Collector Base Voltage (VCBO): 40V
  • Current Rating: 500mA
  • Continuous Collector Current: 500mA
  • Collector Emitter Saturation Voltage: 1.2V
  • Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
  • Contact Plating: Copper, Silver, Tin
  • Length: 5.2mm
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Power Dissipation: 625mW
  • Width: 4.19mm
  • Lifecycle Status: LAST SHIPMENTS (Last Updated: 3 days ago)
  • Base Part Number: 2N6426
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Through Hole
  • RoHS Status: RoHS Compliant
  • Pbfree Code: yes
  • Lead Free: Lead Free
  • Number of Terminations: 3
  • Pin Count: 3
  • Emitter Base Voltage (VEBO): 12V
  • Published: 2007
  • Element Configuration: Single
  • Voltage - Rated DC: 40V
  • Collector Emitter Voltage (VCEO): 40V
  • Operating Temperature: -55°C~150°C TJ
  • Max Collector Current: 500mA
  • JESD-609 Code: e1
  • Current - Collector Cutoff (Max): 1μA
  • Polarity: NPN
  • Subcategory: Other Transistors
  • Height: 5.33mm
  • Max Power Dissipation: 625mW
  • Weight: 4.535924g
  • Transistor Type: NPN - Darlington
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500μA, 500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 100mA 5V

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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