Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:117000
- Qty Unit Price price
- 1 $0.027 $0.027
- 10 $0.026 $0.26
- 100 $0.025 $2.5
- 1000 $0.024 $24
- 10000 $0.0235 $235
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：MUN2214T1
- Manufacturer：ON Semiconductor
- Category：Transistors - Bipolar (BJT) - Single, Pre-Biased
- Datasheet：MUN2214T1
- SKU：3645282
- Description：Cut Tape (CT) Surface Mount NPN - Pre-Biased Single Pre-Biased Bipolar Transistor (BJT) 80 @ 5mA 10V 100mA 338mW 50V
User Guide
User Guide
MUN2214T1 Details
Cut Tape (CT) Surface Mount NPN - Pre-Biased Single Pre-Biased Bipolar Transistor (BJT) 80 @ 5mA 10V 100mA 338mW 50V
MUN2214T1 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- ECCN Code: EAR99
- Min Operating Temperature: -55°C
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Terminal Position: DUAL
- Pin Count: 3
- Qualification Status: Not Qualified
- Collector Emitter Breakdown Voltage: 50V
- Terminal Form: GULL WING
- Reach Compliance Code: not_compliant
- Element Configuration: Single
- Current Rating: 100mA
- Continuous Collector Current: 100mA
- Transistor Application: SWITCHING
- Package / Case: TO-236-3, SC-59, SOT-23-3
- JESD-30 Code: R-PDSO-G3
- Subcategory: BIP General Purpose Small Signal
- Resistor - Base (R1): 10 k Ω
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300μA, 10mA
- Power Dissipation: 230mW
- Max Power Dissipation: 338mW
- Mounting Type: Surface Mount
- Number of Elements: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Lead Free: Contains Lead
- Voltage - Rated DC: 50V
- JESD-609 Code: e0
- Max Operating Temperature: 150°C
- Published: 2007
- hFE Min: 80
- Max Collector Current: 100mA
- Packaging: Cut Tape (CT)
- Polarity: NPN
- Current - Collector Cutoff (Max): 500nA
- Collector Emitter Voltage (VCEO): 250mV
- Transistor Type: NPN - Pre-Biased
- Resistor - Emitter Base (R2): 47 k Ω
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA 10V
- Additional Feature: BUILT-IN BIAS RESISTOR RATIO IS 4.7
- Base Part Number: MUN2214
Search for similar products
MUN2214T1 Similar Products
The four parts on the right have similar specifications to ON Semiconductor & MUN2214T1
ON Semiconductor — Manufacturer Introduction
ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
