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- Manufacturer No：SISA10DN-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SISA10DN-T1-GE3
- SKU：366271
- Description：MOSFET 30V 3.7mOhm@10V 30A N-Ch G-IV
User Guide
User Guide
SISA10DN-T1-GE3 Details
MOSFET 30V 3.7mOhm@10V 30A N-Ch G-IV
SISA10DN-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Number of Pins: 8
- Number of Terminations: 5
- Factory Lead Time: 14 Weeks
- REACH SVHC: Unknown
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Terminal Form: FLAT
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Threshold Voltage: 1.1V
- Length: 3.4mm
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Turn On Delay Time: 20 ns
- Series: TrenchFET?
- Subcategory: FET General Purpose Powers
- Power Dissipation: 3.6W
- Package / Case: PowerPAK? 1212-8
- Avalanche Energy Rating (Eas): 20 mJ
- Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
- Power Dissipation-Max: 3.6W Ta 39W Tc
- Rds On (Max) @ Id, Vgs: 3.7m Ω @ 10A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Radiation Hardening: No
- Published: 2012
- Time@Peak Reflow Temperature-Max (s): 40
- Element Configuration: Dual
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 30V
- Peak Reflow Temperature (Cel): 240
- FET Type: N-Channel
- Continuous Drain Current (ID): 30A
- Operating Mode: ENHANCEMENT MODE
- Case Connection: DRAIN
- Width: 3.4mm
- Fall Time (Typ): 20 ns
- Height: 1.12mm
- Turn-Off Delay Time: 27 ns
- Vgs(th) (Max) @ Id: 2.2V @ 250μA
- Current - Continuous Drain (Id) @ 25°C: 30A Tc
- JESD-30 Code: S-PDSO-F5
- Vgs (Max): +20V, -16V
- Drain-source On Resistance-Max: 0.0037Ohm
- Input Capacitance (Ciss) (Max) @ Vds: 2425pF @ 15V
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