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- Manufacturer No：SIRA12DP-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SIRA12DP-T1-GE3
- SKU：370324
- Description：MOSFET 30V 4.3mOhm@10V 25A N-Ch G-IV
User Guide
User Guide
SIRA12DP-T1-GE3 Details
MOSFET 30V 4.3mOhm@10V 25A N-Ch G-IV
SIRA12DP-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Lead Free: Lead Free
- Terminal Position: DUAL
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Published: 2001
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Continuous Drain Current (ID): 25A
- Threshold Voltage: 1.1V
- Subcategory: FET General Purpose Power
- Turn-Off Delay Time: 25 ns
- Turn On Delay Time: 20 ns
- Series: TrenchFET?
- Package / Case: PowerPAK? SO-8
- Length: 6.25mm
- Width: 5.26mm
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Vgs (Max): +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Radiation Hardening: No
- Number of Pins: 8
- Number of Terminations: 5
- REACH SVHC: Unknown
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 30V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Terminal Form: C BEND
- Case Connection: DRAIN
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Fall Time (Typ): 20 ns
- Height: 1.12mm
- Vgs(th) (Max) @ Id: 2.2V @ 250μA
- Power Dissipation: 4.5W
- Weight: 506.605978mg
- Resistance: 4.3MOhm
- Current - Continuous Drain (Id) @ 25°C: 25A Tc
- JESD-30 Code: R-PDSO-C5
- Rds On (Max) @ Id, Vgs: 4.3m Ω @ 10A, 10V
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