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- Manufacturer No：SUM110P06-08L-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SUM110P06-08L-E3
- SKU：376040
- Description：MOSFET P-CH 60V 110A D2PAK
User Guide
User Guide
SUM110P06-08L-E3 Details
MOSFET P-CH 60V 110A D2PAK
SUM110P06-08L-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Contact Plating: Tin
- Number of Pins: 3
- Drain to Source Voltage (Vdss): 60V
- Max Operating Temperature: 175°C
- Published: 2009
- Height: 5.08mm
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- FET Type: P-Channel
- Width: 9.65mm
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Series: TrenchFET?
- Drain to Source Breakdown Voltage: -60V
- Power Dissipation: 3.75W
- Threshold Voltage: -1V
- Current - Continuous Drain (Id) @ 25°C: 110A Tc
- Rise Time: 190ns
- Input Capacitance: 9.2nF
- Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
- Continuous Drain Current (ID): -110A
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Lead Free: Lead Free
- Min Operating Temperature: -55°C
- REACH SVHC: No SVHC
- Factory Lead Time: 14 Weeks
- Max Junction Temperature (Tj): 175°C
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~175°C TJ
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Turn On Delay Time: 20 ns
- Fall Time (Typ): 300 ns
- Resistance: 8mOhm
- Supplier Device Package: TO-263 (D2Pak)
- Length: 10.41mm
- Turn-Off Delay Time: 140 ns
- Weight: 1.437803g
- Drain to Source Resistance: 6.5mOhm
- Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
- Rds On Max: 8 mΩ
- Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 25V
- Power Dissipation-Max: 3.75W Ta 272W Tc
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