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- Manufacturer No：SI7997DP-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI7997DP-T1-GE3
- SKU：376196
- Description：MOSFET 2P-CH 30V 60A PPAK SO-8
User Guide
User Guide
SI7997DP-T1-GE3 Details
MOSFET 2P-CH 30V 60A PPAK SO-8
SI7997DP-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Pbfree Code: yes
- Lead Free: Lead Free
- Pin Count: 8
- REACH SVHC: No SVHC
- Number of Terminations: 5
- Published: 2015
- Time@Peak Reflow Temperature-Max (s): 40
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Pulsed Drain Current-Max (IDM): 100A
- Subcategory: Other Transistors
- Drain Current-Max (Abs) (ID): 60A
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Fall Time (Typ): 40 ns
- Height: 1.12mm
- Drain to Source Breakdown Voltage: -30V
- Vgs(th) (Max) @ Id: 2.2V @ 250μA
- Resistance: 5.5mOhm
- JESD-30 Code: R-XDSO-C5
- Package / Case: PowerPAK? SO-8 Dual
- Avalanche Energy Rating (Eas): 45 mJ
- Rds On (Max) @ Id, Vgs: 5.5m Ω @ 20A, 10V
- Continuous Drain Current (ID): -20.8A
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Pins: 8
- Qualification Status: Not Qualified
- Peak Reflow Temperature (Cel): 260
- Reach Compliance Code: unknown
- Terminal Finish: Matte Tin (Sn)
- Max Junction Temperature (Tj): 150°C
- Element Configuration: Dual
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Operating Mode: ENHANCEMENT MODE
- Terminal Form: C BEND
- Case Connection: DRAIN
- Current - Continuous Drain (Id) @ 25°C: 60A
- Turn On Delay Time: 15 ns
- Power Dissipation: 3.5W
- Series: TrenchFET?
- FET Type: 2 P-Channel (Dual)
- Weight: 506.605978mg
- Turn-Off Delay Time: 115 ns
- Max Power Dissipation: 46W
- Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
- Threshold Voltage: -2.2V
- Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 15V
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