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- Manufacturer No：CY7C1018DV33-10VXI
- Manufacturer：Cypress Semiconductor
- Category：Memory
- Datasheet：CY7C1018DV33-10VXI
- SKU：3791007
- Description：e4 Surface Mount CY7C1018 Tube ic memory 100MHz 10ns 20.828mm 60mA
User Guide
User Guide
CY7C1018DV33-10VXI Details
e4 Surface Mount CY7C1018 Tube ic memory 100MHz 10ns 20.828mm 60mA
CY7C1018DV33-10VXI Specification Parameters
- Part Status: Active
- Mounting Type: Surface Mount
- Number of Functions: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Memory Width: 8
- Factory Lead Time: 6 Weeks
- Supply Voltage: 3.3V
- REACH SVHC: No SVHC
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Time@Peak Reflow Temperature-Max (s): 30
- Number of Terminations: 32
- Operating Temperature: -40°C~85°C TA
- Standby Voltage-Min: 2V
- Max Frequency: 100MHz
- Memory Type: Volatile
- Word Size: 8b
- Memory Format: SRAM
- Supply Voltage-Max (Vsup): 3.63V
- Sync/Async: Asynchronous
- Technology: SRAM - Asynchronous
- Height Seated (Max): 3.556mm
- Address Bus Width: 17b
- Length: 20.828mm
- Base Part Number: CY7C1018
- RoHS Status: ROHS3 Compliant
- Mount: Surface Mount
- Number of Ports: 1
- Radiation Hardening: No
- JESD-609 Code: e4
- Terminal Position: DUAL
- Packaging: Tube
- Operating Supply Voltage: 3.3V
- Peak Reflow Temperature (Cel): 260
- Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)
- Number of Pins: 32
- Pin Count: 32
- Published: 2002
- Memory Interface: Parallel
- Output Characteristics: 3-STATE
- Voltage - Supply: 3V~3.6V
- Nominal Supply Current: 60mA
- Write Cycle Time - Word, Page: 10ns
- I/O Type: COMMON
- Supply Voltage-Min (Vsup): 2.97V
- Memory Size: 1Mb 128K x 8
- Density: 1 Mb
- Standby Current-Max: 0.003A
- Package / Case: 32-BSOJ (0.300, 7.62mm Width)
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