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- Manufacturer No：CY14V256LA-BA35XI
- Manufacturer：Cypress Semiconductor
- Category：Memory
- Datasheet：CY14V256LA-BA35XI
- SKU：3791304
- Description：3A991.B.2.A Surface Mount CY14V256 Tray ic memory 35ns 10mm 0.008A 256kb
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User Guide
CY14V256LA-BA35XI Details
3A991.B.2.A Surface Mount CY14V256 Tray ic memory 35ns 10mm 0.008A 256kb
CY14V256LA-BA35XI Specification Parameters
- Part Status: Active
- Mounting Type: Surface Mount
- Number of Functions: 1
- Memory Width: 8
- Operating Supply Voltage: 3.3V
- Qualification Status: Not Qualified
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Published: 2009
- Number of Terminations: 48
- Length: 10mm
- Terminal Position: BOTTOM
- Height Seated (Max): 1.2mm
- Memory Type: Non-Volatile
- Data Bus Width: 8b
- Voltage - Supply: 2.7V~3.6V
- Operating Mode: ASYNCHRONOUS
- Subcategory: SRAMs
- Write Cycle Time - Word, Page: 35ns
- Memory Size: 256Kb 32K x 8
- Density: 256 kb
- Technology: NVSRAM (Non-Volatile SRAM)
- Supply Current-Max: 0.06mA
- Package / Case: 48-TFBGA
- RoHS Status: ROHS3 Compliant
- Mount: Surface Mount
- Pbfree Code: yes
- Supply Voltage: 3.3V
- Packaging: Tray
- Factory Lead Time: 16 Weeks
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Supply Voltage-Min (Vsup): 3V
- Operating Temperature: -40°C~85°C TA
- Number of Pins: 48
- Supply Voltage-Max (Vsup): 3.6V
- Memory Interface: Parallel
- JESD-609 Code: e1
- Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
- Word Size: 8b
- Contact Plating: Copper, Silver, Tin
- Access Time (Max): 35 ns
- HTS Code: 8542.32.00.41
- ECCN Code: 3A991.B.2.A
- Terminal Pitch: 0.75mm
- Memory Format: NVSRAM
- Organization: 32KX8
- Standby Current-Max: 0.008A
- Base Part Number: CY14V256
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