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- Manufacturer No：CY14B104LA-ZS45XIT
- Manufacturer：Cypress Semiconductor
- Category：Memory
- Datasheet：CY14B104LA-ZS45XIT
- SKU：3792367
- Description：3A991.B.2.A Surface Mount CY14B104 Tape & Reel (TR) ic memory 45ns 18.415mm 52mA 4Mb
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CY14B104LA-ZS45XIT Details
3A991.B.2.A Surface Mount CY14B104 Tape & Reel (TR) ic memory 45ns 18.415mm 52mA 4Mb
CY14B104LA-ZS45XIT Specification Parameters
- Part Status: Active
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- JESD-609 Code: e4
- Terminal Position: DUAL
- Qualification Status: Not Qualified
- Published: 2011
- Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)
- Supply Voltage: 3V
- Operating Temperature: -40°C~85°C TA
- Number of Terminations: 44
- Pin Count: 44
- Terminal Pitch: 0.8mm
- Memory Type: Non-Volatile
- Word Size: 8b
- Nominal Supply Current: 52mA
- Operating Mode: ASYNCHRONOUS
- HTS Code: 8542.32.00.41
- ECCN Code: 3A991.B.2.A
- Standby Current-Max: 0.005A
- Technology: NVSRAM (Non-Volatile SRAM)
- Memory Size: 4Mb 512K x 8
- Length: 18.415mm
- Height Seated (Max): 1.194mm
- RoHS Status: ROHS3 Compliant
- Mount: Surface Mount
- Number of Functions: 1
- Memory Width: 8
- Factory Lead Time: 6 Weeks
- Peak Reflow Temperature (Cel): 260
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Time@Peak Reflow Temperature-Max (s): 30
- Operating Supply Voltage: 3V
- Supply Voltage-Max (Vsup): 3.6V
- Number of Pins: 44
- Supply Voltage-Min (Vsup): 2.7V
- Memory Interface: Parallel
- Data Bus Width: 8b
- Voltage - Supply: 2.7V~3.6V
- Contact Plating: Gold, Tin
- Subcategory: SRAMs
- Access Time (Max): 45 ns
- Write Cycle Time - Word, Page: 45ns
- Memory Format: NVSRAM
- Density: 4 Mb
- Package / Case: 44-TSOP (0.400, 10.16mm Width)
- Organization: 512KX8
- Base Part Number: CY14B104
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