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  • Manufacturer No:
    SIR882ADP-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    381579
  • Description:
    MOSFET N-CH 100V 60A PPAK SO-8
  • Quantity:
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Inventory:0
  • Qty Unit Price price
  • 1 $2.51 $2.51
  • 10 $2.485 $24.85
  • 100 $2.46 $246
  • 1000 $2.435 $2435
  • 10000 $2.41 $24100

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  • Manufacturer No:
    SIR882ADP-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SIR882ADP-T1-GE3
  • SKU:
    381579
  • Description:
    MOSFET N-CH 100V 60A PPAK SO-8

SIR882ADP-T1-GE3 Details

MOSFET N-CH 100V 60A PPAK SO-8

SIR882ADP-T1-GE3 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Channels: 1
  • Lead Free: Lead Free
  • Number of Pins: 8
  • Drain to Source Voltage (Vdss): 100V
  • Factory Lead Time: 14 Weeks
  • Element Configuration: Single
  • Operating Temperature: -55°C~150°C TJ
  • Packaging: Cut Tape (CT)
  • Technology: MOSFET (Metal Oxide)
  • Continuous Drain Current (ID): 60A
  • Fall Time (Typ): 9 ns
  • Turn On Delay Time: 11 ns
  • Package / Case: PowerPAK? SO-8
  • Turn-Off Delay Time: 34 ns
  • Current - Continuous Drain (Id) @ 25°C: 60A Tc
  • Power Dissipation: 5.4W
  • Drain to Source Resistance: 7.2mOhm
  • Resistance: 8.7mOhm
  • Input Capacitance: 1.975nF
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Min Operating Temperature: -55°C
  • Published: 2013
  • Max Operating Temperature: 150°C
  • REACH SVHC: Unknown
  • Gate to Source Voltage (Vgs): 20V
  • Threshold Voltage: 1.2V
  • FET Type: N-Channel
  • Vgs (Max): ±20V
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Rise Time: 12ns
  • Series: TrenchFET?
  • Supplier Device Package: PowerPAK? SO-8
  • Weight: 506.605978mg
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 250μA
  • Power Dissipation-Max: 5.4W Ta 83W Tc
  • Rds On Max: 8.7 mΩ
  • Input Capacitance (Ciss) (Max) @ Vds: 1975pF @ 50V

Excellent

Based on reviews

Excellent

Based on reviews

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