CY7C1470BV25-200AXCCypress Semiconductor
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    • Manufacturer No：
      CY7C1470BV25-200AXC
    • Manufacturer：
      Cypress Semiconductor
    • Category：
      Memory
    • Datasheet：
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    • SKU：
      3820800
    • Description：
      Synchronous Active 3-STATE 2004 SRAM Memory 0C~70C TA 2.375V 72Mb 450mA
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    • Manufacturer No：
      CY7C1470BV25-200AXC
    • Manufacturer：
      Cypress Semiconductor
    • Category：
      Memory
    • Datasheet：
      CY7C1470BV25-200AXC
    • SKU：
      3820800
    • Description：
      Synchronous Active 3-STATE 2004 SRAM Memory 0C~70C TA 2.375V 72Mb 450mA

    User Guide

    User Guide

    CY7C1470BV25-200AXC Details

    Synchronous Active 3-STATE 2004 SRAM Memory 0C~70C TA 2.375V 72Mb 450mA

    CY7C1470BV25-200AXC Specification Parameters

    • Part Status: Active
    • Mounting Type: Surface Mount
    • Number of Functions: 1
    • JESD-609 Code: e3
    • Number of Ports: 4
    • Packaging: Tray
    • Supply Voltage: 2.5V
    • Terminal Finish: Matte Tin (Sn)
    • Time@Peak Reflow Temperature-Max (s): 40
    • Terminal Position: QUAD
    • Number of Pins: 100
    • Terminal Pitch: 0.65mm
    • Published: 2004
    • Operating Temperature: 0°C~70°C TA
    • Length: 20mm
    • Clock Frequency: 200MHz
    • Access Time: 3ns
    • Package / Case: 100-LQFP
    • I/O Type: COMMON
    • Supply Voltage-Max (Vsup): 2.625V
    • Additional Feature: PIPELINED ARCHITECTURE
    • Technology: SRAM - Synchronous, SDR
    • Standby Voltage-Min: 2.38V
    • Memory Size: 72Mb 2M x 36
    • Address Bus Width: 21b
    • Base Part Number: CY7C1470
    • RoHS Status: ROHS3 Compliant
    • Mount: Surface Mount
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Factory Lead Time: 8 Weeks
    • Peak Reflow Temperature (Cel): 260
    • Operating Supply Voltage: 2.5V
    • Moisture Sensitivity Level (MSL): 3 (168 Hours)
    • Height Seated (Max): 1.6mm
    • Number of Terminations: 100
    • Pin Count: 100
    • Memory Width: 36
    • Memory Interface: Parallel
    • Output Characteristics: 3-STATE
    • Memory Type: Volatile
    • Memory Format: SRAM
    • Voltage - Supply: 2.375V~2.625V
    • Sync/Async: Synchronous
    • Supply Voltage-Min (Vsup): 2.375V
    • Nominal Supply Current: 450mA
    • ECCN Code: 3A991.B.2.A
    • Word Size: 36b
    • Density: 72 Mb
    • Series: NoBL?
    • Organization: 2MX36
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