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- Manufacturer No：S29GL128P10FFI010
- Manufacturer：Cypress Semiconductor
- Category：Memory
- Datasheet：S29GL128P10FFI010
- SKU：3832391
- Description：Asynchronous Active Copper Silver Tin 2012 FLASH Memory -40C~85C TA 2.7V 128Mb 110mA
User Guide
User Guide
S29GL128P10FFI010 Details
Asynchronous Active Copper Silver Tin 2012 FLASH Memory -40C~85C TA 2.7V 128Mb 110mA
S29GL128P10FFI010 Specification Parameters
- Part Status: Active
- Mounting Type: Surface Mount
- Number of Functions: 1
- Radiation Hardening: No
- Data Polling: YES
- Ready/Busy: YES
- Lead Free: Lead Free
- Factory Lead Time: 12 Weeks
- REACH SVHC: No SVHC
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 40
- Programming Voltage: 3V
- Terminal Pitch: 1mm
- Supply Voltage-Max (Vsup): 3.6V
- Number of Terminations: 64
- Supply Voltage-Min (Vsup): 2.7V
- JESD-609 Code: e1
- Memory Type: Non-Volatile
- Data Bus Width: 8b
- Contact Plating: Copper, Silver, Tin
- Sync/Async: Asynchronous
- Technology: FLASH - NOR
- Terminal Finish: Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
- Power Supplies: 3/3.3V
- Write Cycle Time - Word, Page: 100ns
- Package / Case: 64-LBGA
- Sector Size: 128K
- Page Size: 8/16words
- Organization: 128MX1
- RoHS Status: ROHS3 Compliant
- Mount: Surface Mount
- Memory Width: 1
- Command User Interface: YES
- Toggle Bit: YES
- Common Flash Interface: YES
- Alternate Memory Width: 8
- Packaging: Tray
- Published: 2012
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Supply Voltage: 3V
- Operating Temperature: -40°C~85°C TA
- Memory Format: FLASH
- Terminal Position: BOTTOM
- Number of Pins: 64
- Memory Interface: Parallel
- Height Seated (Max): 1.4mm
- Number of Sectors/Size: 128
- Voltage - Supply: 2.7V~3.6V
- Length: 13mm
- Nominal Supply Current: 110mA
- HTS Code: 8542.32.00.51
- Access Time (Max): 100 ns
- Standby Current-Max: 0.000005A
- ECCN Code: 3A991.B.1.A
- Memory Size: 128Mb 16M x 8
- Density: 128 Mb
- Series: GL-P
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