SIRA18DP-T1-GE3Vishay Siliconix
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    SIRA18DP-T1-GE3123
    • Manufacturer No：
      SIRA18DP-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      384042
    • Description：
      MOSFET 30V 7.5mOhm@10V 13.3A N-Ch G-IV
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    Inventory:3000
    • Qty Unit Price price
    • 1 $101.981 $101.981
    • 10 $100.971 $1009.71
    • 100 $99.971 $9997.1
    • 1000 $98.981 $98981
    • 10000 $98 $980000

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    SIRA18DP-T1-GE3
    • Manufacturer No：
      SIRA18DP-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SIRA18DP-T1-GE3
    • SKU：
      384042
    • Description：
      MOSFET 30V 7.5mOhm@10V 13.3A N-Ch G-IV

    User Guide

    User Guide

    SIRA18DP-T1-GE3 Details

    MOSFET 30V 7.5mOhm@10V 13.3A N-Ch G-IV

    SIRA18DP-T1-GE3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Number of Pins: 8
    • Number of Terminations: 5
    • Time@Peak Reflow Temperature-Max (s): 40
    • REACH SVHC: Unknown
    • Gate to Source Voltage (Vgs): 20V
    • DS Breakdown Voltage-Min: 30V
    • Peak Reflow Temperature (Cel): 240
    • Packaging: Cut Tape (CT)
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Pulsed Drain Current-Max (IDM): 70A
    • Continuous Drain Current (ID): 33A
    • Subcategory: FET General Purpose Powers
    • Vgs(th) (Max) @ Id: 2.4V @ 250μA
    • Current - Continuous Drain (Id) @ 25°C: 33A Tc
    • Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
    • Rds On (Max) @ Id, Vgs: 7.5m Ω @ 10A, 10V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Number of Elements: 1
    • Pbfree Code: yes
    • Contact Plating: Tin
    • Terminal Position: DUAL
    • Published: 2011
    • Factory Lead Time: 14 Weeks
    • Transistor Element Material: SILICON
    • Drain to Source Voltage (Vdss): 30V
    • Operating Temperature: -55°C~150°C TJ
    • Threshold Voltage: 1.2V
    • Terminal Form: FLAT
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Case Connection: DRAIN
    • JESD-30 Code: R-PDSO-F5
    • Series: TrenchFET?
    • Power Dissipation: 3.3W
    • Package / Case: PowerPAK? SO-8
    • Vgs (Max): +20V, -16V
    • Drain-source On Resistance-Max: 0.0075Ohm
    • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
    • Power Dissipation-Max: 3.3W Ta 14.7W Tc
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