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- Manufacturer No：IXXH50N60C3D1
- Manufacturer：IXYS
- Category：Transistors - IGBTs - Single
- Datasheet：IXXH50N60C3D1
- SKU：3895890
- Description：Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247AD
User Guide
User Guide
IXXH50N60C3D1 Details
Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247AD
IXXH50N60C3D1 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Pbfree Code: yes
- Lead Free: Lead Free
- Number of Terminations: 3
- Pin Count: 3
- Gate-Emitter Thr Voltage-Max: 5.5V
- Element Configuration: Single
- Collector Emitter Breakdown Voltage: 600V
- Gate-Emitter Voltage-Max: 20V
- Power Dissipation: 600W
- Max Collector Current: 100A
- Factory Lead Time: 28 Weeks
- Reverse Recovery Time: 25 ns
- Package / Case: TO-247-3
- Transistor Application: POWER CONTROL
- Turn On Delay Time: 24 ns
- JEDEC-95 Code: TO-247AD
- Weight: 6.500007g
- Turn On Time: 69 ns
- Gate Charge: 64nC
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
- Td (on/off) @ 25°C: 24ns/62ns
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Packaging: Tube
- Number of Pins: 3
- Published: 2013
- Transistor Element Material: SILICON
- Input Type: Standard
- Collector Emitter Voltage (VCEO): 600V
- Max Power Dissipation: 600W
- Operating Temperature: -55°C~175°C TJ
- Collector Emitter Saturation Voltage: 2.3V
- Polarity/Channel Type: N-CHANNEL
- Current - Collector Pulsed (Icm): 200A
- Case Connection: COLLECTOR
- Subcategory: Insulated Gate BIP Transistors
- IGBT Type: PT
- Turn Off Time-Nom (toff): 170 ns
- Turn-Off Delay Time: 62 ns
- Series: GenX3?, XPT?
- Base Part Number: IXX*N60
- Test Condition: 360V, 36A, 5 Ω, 15V
- Switching Energy: 720μJ (on), 330μJ (off)
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