MID100-12A3IXYS
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    • Manufacturer No：
      MID100-12A3
    • Manufacturer：
      IXYS
    • Category：
      Transistors - IGBTs - Modules
    • Datasheet：
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    • SKU：
      3897784
    • Description：
      Trans IGBT Module N-CH 1.2KV 135A 7-Pin Y4-M5
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    • Manufacturer No：
      MID100-12A3
    • Manufacturer：
      IXYS
    • Category：
      Transistors - IGBTs - Modules
    • Datasheet：
      MID100-12A3
    • SKU：
      3897784
    • Description：
      Trans IGBT Module N-CH 1.2KV 135A 7-Pin Y4-M5

    User Guide

    User Guide

    MID100-12A3 Details

    Trans IGBT Module N-CH 1.2KV 135A 7-Pin Y4-M5

    MID100-12A3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Number of Elements: 1
    • NTC Thermistor: No
    • Published: 2013
    • Mounting Type: Chassis Mount
    • Configuration: Single
    • Number of Pins: 7
    • Factory Lead Time: 24 Weeks
    • Current - Collector Cutoff (Max): 5mA
    • Additional Feature: UL RECOGNIZED
    • Terminal Position: UPPER
    • Mount: Chassis Mount, Screw
    • Collector Emitter Voltage (VCEO): 1.2kV
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Max Collector Current: 135A
    • Subcategory: Insulated Gate BIP Transistors
    • IGBT Type: NPT
    • JESD-30 Code: R-XUFM-X5
    • Power - Max: 560W
    • Base Part Number: MID
    • Package / Case: Y4-M5
    • RoHS Status: ROHS3 Compliant
    • Packaging: Bulk
    • Pbfree Code: yes
    • Lead Free: Lead Free
    • Number of Terminations: 5
    • Transistor Element Material: SILICON
    • Input: Standard
    • Gate-Emitter Voltage-Max: 20V
    • Case Connection: ISOLATED
    • Terminal Form: UNSPECIFIED
    • Operating Temperature: -40°C~150°C TJ
    • Polarity/Channel Type: N-CHANNEL
    • Collector Emitter Breakdown Voltage: 1.2kV
    • Collector Emitter Saturation Voltage: 1.2kV
    • Turn On Time: 150 ns
    • Transistor Application: POWER CONTROL
    • VCEsat-Max: 3 V
    • Turn Off Time-Nom (toff): 700 ns
    • Max Power Dissipation: 560W
    • Input Capacitance: 5.5nF
    • Input Capacitance (Cies) @ Vce: 5.5nF @ 25V
    • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 75A
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