MKI50-12F7IXYS
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    MKI50-12F7123
    • Manufacturer No：
      MKI50-12F7
    • Manufacturer：
      IXYS
    • Category：
      Transistors - IGBTs - Modules
    • Datasheet：
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    • SKU：
      3898734
    • Description：
      MOD IGBT H-BRIDGE 1200V 65A E2
    • Quantity：
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    Inventory:1
    • Qty Unit Price price
    • 1 $18830.773 $18830.773
    • 10 $18644.329 $186443.29
    • 100 $18459.731 $1845973.1
    • 1000 $18276.961 $18276961
    • 10000 $18096 $180960000

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    MKI50-12F7
    • Manufacturer No：
      MKI50-12F7
    • Manufacturer：
      IXYS
    • Category：
      Transistors - IGBTs - Modules
    • Datasheet：
      MKI50-12F7
    • SKU：
      3898734
    • Description：
      MOD IGBT H-BRIDGE 1200V 65A E2

    User Guide

    User Guide

    MKI50-12F7 Details

    MOD IGBT H-BRIDGE 1200V 65A E2

    MKI50-12F7 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • NTC Thermistor: No
    • Number of Elements: 4
    • Mount: Chassis Mount
    • Transistor Element Material: SILICON
    • Case Connection: ISOLATED
    • Pin Count: 17
    • Operating Temperature: -40°C~125°C TJ
    • Polarity/Channel Type: N-CHANNEL
    • Collector Emitter Voltage (VCEO): 3.8V
    • Input Capacitance: 3.3nF
    • Transistor Application: POWER CONTROL
    • Max Power Dissipation: 350W
    • IGBT Type: NPT
    • Package / Case: E2
    • Factory Lead Time: 76 Weeks
    • JESD-30 Code: R-XUFM-X17
    • Base Part Number: MKI
    • RoHS Status: ROHS3 Compliant
    • Pbfree Code: yes
    • Lead Free: Lead Free
    • Mounting Type: Chassis Mount
    • Published: 2005
    • Input: Standard
    • Number of Terminations: 17
    • Terminal Form: UNSPECIFIED
    • Terminal Position: UPPER
    • Collector Emitter Breakdown Voltage: 1.2kV
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Current - Collector Cutoff (Max): 700μA
    • Max Collector Current: 65A
    • Power - Max: 350W
    • Turn On Time: 190 ns
    • Configuration: Full Bridge Inverter
    • Turn Off Time-Nom (toff): 390 ns
    • Input Capacitance (Cies) @ Vce: 3.3nF @ 25V
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