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- Manufacturer No：IXFH24N80P
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXFH24N80P
- SKU：3910716
- Description：In a Tube of 30, N-Channel MOSFET, 24 A, 800 V, 3-Pin TO-247AD IXYS IXFH24N80P
User Guide
User Guide
IXFH24N80P Details
In a Tube of 30, N-Channel MOSFET, 24 A, 800 V, 3-Pin TO-247AD IXYS IXFH24N80P
IXFH24N80P Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- Radiation Hardening: No
- Threshold Voltage: 5V
- Number of Terminations: 3
- Pin Count: 3
- Published: 2006
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 30V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Drain to Source Breakdown Voltage: 800V
- Factory Lead Time: 30 Weeks
- Subcategory: FET General Purpose Power
- Vgs (Max): ±30V
- Turn-Off Delay Time: 75 ns
- Additional Feature: AVALANCHE RATED
- Length: 16.26mm
- Turn On Delay Time: 32 ns
- Power Dissipation: 650W
- Current - Continuous Drain (Id) @ 25°C: 24A Tc
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
- Power Dissipation-Max: 650W Tc
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Packaging: Tube
- Number of Pins: 3
- REACH SVHC: No SVHC
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Width: 5.3mm
- Case Connection: DRAIN
- Continuous Drain Current (ID): 24A
- Package / Case: TO-247-3
- Resistance: 400mOhm
- Pulsed Drain Current-Max (IDM): 55A
- Fall Time (Typ): 24 ns
- JEDEC-95 Code: TO-247AD
- Rise Time: 27ns
- Height: 21.46mm
- Series: HiPerFET?, PolarHT?
- Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
- Rds On (Max) @ Id, Vgs: 400m Ω @ 12A, 10V
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