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- Manufacturer No：IXTH5N100A
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXTH5N100A
- SKU：3910991
- Description：MOSFET N-CH 1000V 5A TO247AD
User Guide
User Guide
IXTH5N100A Details
MOSFET N-CH 1000V 5A TO247AD
IXTH5N100A Specification Parameters
- Part Status: Active
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Packaging: Tube
- Number of Pins: 3
- Current Rating: 5A
- Continuous Drain Current (ID): 5A
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Voltage - Rated DC: 1kV
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Factory Lead Time: 28 Weeks
- Subcategory: FET General Purpose Power
- Package / Case: TO-247-3
- Rise Time: 20ns
- JEDEC-95 Code: TO-247AD
- Vgs(th) (Max) @ Id: 4.5V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
- RoHS Status: ROHS3 Compliant
- Mount: Through Hole
- Pbfree Code: yes
- Lead Free: Lead Free
- Number of Terminations: 3
- Pin Count: 3
- Drain Current-Max (Abs) (ID): 5A
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Pulsed Drain Current-Max (IDM): 20A
- Published: 2000
- Drain to Source Breakdown Voltage: 1kV
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Drain to Source Voltage (Vdss): 1000V
- Case Connection: DRAIN
- Fall Time (Typ): 30 ns
- Turn-Off Delay Time: 100 ns
- Resistance: 2.4Ohm
- Power Dissipation: 180W
- Current - Continuous Drain (Id) @ 25°C: 5A Tc
- Power Dissipation-Max: 180W Tc
- Rds On (Max) @ Id, Vgs: 2 Ω @ 2.5A, 10V
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