IXFK64N60P3IXYS
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    IXFK64N60P3123
    • Manufacturer No：
      IXFK64N60P3
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      3911538
    • Description：
      MOSFET 600V 64A 0.095Ohm PolarP3 Power MOSFET
    • Quantity：
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    Inventory:332
    • Qty Unit Price price
    • 1 $14.467 $14.467
    • 10 $14.323 $143.23
    • 100 $14.181 $1418.1
    • 1000 $14.04 $14040
    • 10000 $13.9 $139000

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    IXFK64N60P3
    • Manufacturer No：
      IXFK64N60P3
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IXFK64N60P3
    • SKU：
      3911538
    • Description：
      MOSFET 600V 64A 0.095Ohm PolarP3 Power MOSFET

    User Guide

    User Guide

    IXFK64N60P3 Details

    MOSFET 600V 64A 0.095Ohm PolarP3 Power MOSFET

    IXFK64N60P3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • ECCN Code: EAR99
    • Packaging: Tube
    • Number of Pins: 3
    • Qualification Status: Not Qualified
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Gate to Source Voltage (Vgs): 30V
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Factory Lead Time: 30 Weeks
    • Subcategory: FET General Purpose Power
    • Length: 19.96mm
    • Fall Time (Typ): 11 ns
    • Pulsed Drain Current-Max (IDM): 160A
    • Turn On Delay Time: 43 ns
    • Continuous Drain Current (ID): 64A
    • Turn-Off Delay Time: 66 ns
    • Width: 5.13mm
    • Series: HiPerFET?, Polar3?
    • Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V
    • Rds On (Max) @ Id, Vgs: 95m Ω @ 32A, 10V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Lead Free: Lead Free
    • Number of Terminations: 3
    • Pin Count: 3
    • Published: 2011
    • Transistor Element Material: SILICON
    • Drain to Source Breakdown Voltage: 600V
    • Operating Temperature: -55°C~150°C TJ
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Case Connection: DRAIN
    • Vgs (Max): ±30V
    • Additional Feature: AVALANCHE RATED
    • Rise Time: 17 ns
    • Height: 26.16mm
    • Package / Case: TO-264-3, TO-264AA
    • Avalanche Energy Rating (Eas): 1500 mJ
    • Vgs(th) (Max) @ Id: 5V @ 4mA
    • Current - Continuous Drain (Id) @ 25°C: 64A Tc
    • Drain-source On Resistance-Max: 0.095Ohm
    • Power Dissipation: 1.13kW
    • Power Dissipation-Max: 1130W Tc
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