IXGN50N60BD2IXYS
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    • Manufacturer No：
      IXGN50N60BD2
    • Manufacturer：
      IXYS
    • Category：
      Transistors - IGBTs - Modules
    • Datasheet：
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    • SKU：
      3912077
    • Description：
      Trans IGBT Chip N-CH 600V 75A 4-Pin SOT-227B
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    • Manufacturer No：
      IXGN50N60BD2
    • Manufacturer：
      IXYS
    • Category：
      Transistors - IGBTs - Modules
    • Datasheet：
      IXGN50N60BD2
    • SKU：
      3912077
    • Description：
      Trans IGBT Chip N-CH 600V 75A 4-Pin SOT-227B

    User Guide

    User Guide

    IXGN50N60BD2 Details

    Trans IGBT Chip N-CH 600V 75A 4-Pin SOT-227B

    IXGN50N60BD2 Specification Parameters

    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • RoHS Status: RoHS Compliant
    • NTC Thermistor: No
    • Part Status: Obsolete
    • Number of Terminations: 4
    • Mounting Type: Chassis Mount
    • Configuration: Single
    • Collector Emitter Breakdown Voltage: 600V
    • Gate-Emitter Voltage-Max: 20V
    • Case Connection: ISOLATED
    • Operating Temperature: -40°C~150°C TJ
    • Terminal Finish: Nickel (Ni)
    • Turn On Time: 50 ns
    • Current - Collector Cutoff (Max): 200μA
    • Power - Max: 250W
    • Turn Off Time-Nom (toff): 200 ns
    • Subcategory: Insulated Gate BIP Transistors
    • VCEsat-Max: 2.5 V
    • Series: HiPerFAST?
    • Base Part Number: IXG*50N60
    • Input Capacitance (Cies) @ Vce: 4.1nF @ 25V
    • Number of Elements: 1
    • Pbfree Code: yes
    • Lead Free: Lead Free
    • Number of Pins: 4
    • Pin Count: 4
    • Transistor Element Material: SILICON
    • Input: Standard
    • Collector Emitter Voltage (VCEO): 600V
    • Published: 2000
    • Terminal Form: UNSPECIFIED
    • Terminal Position: UPPER
    • Polarity/Channel Type: N-CHANNEL
    • Mount: Chassis Mount, Screw
    • Max Power Dissipation: 250W
    • Max Collector Current: 75A
    • Transistor Application: POWER CONTROL
    • Package / Case: SOT-227-4, miniBLOC
    • Weight: 38.000013g
    • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
    • Input Capacitance: 4.1nF
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