IXGH10N100AU1IXYS
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    • Manufacturer No：
      IXGH10N100AU1
    • Manufacturer：
      IXYS
    • Category：
      Transistors - IGBTs - Single
    • Datasheet：
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    • SKU：
      3912123
    • Description：
      IGBT 1000V 20A 100W TO247AD
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    • Manufacturer No：
      IXGH10N100AU1
    • Manufacturer：
      IXYS
    • Category：
      Transistors - IGBTs - Single
    • Datasheet：
      IXGH10N100AU1
    • SKU：
      3912123
    • Description：
      IGBT 1000V 20A 100W TO247AD

    User Guide

    User Guide

    IXGH10N100AU1 Details

    IGBT 1000V 20A 100W TO247AD

    IXGH10N100AU1 Specification Parameters

    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Moisture Sensitivity Level (MSL): Not Applicable
    • Packaging: Tube
    • Number of Pins: 3
    • Gate-Emitter Thr Voltage-Max: 5.5V
    • Input Type: Standard
    • Gate-Emitter Voltage-Max: 20V
    • Current Rating: 20A
    • Operating Temperature: -55°C~150°C TJ
    • Collector Emitter Breakdown Voltage: 1kV
    • Collector Emitter Voltage (VCEO): 4V
    • Current - Collector Pulsed (Icm): 40A
    • Polarity/Channel Type: N-CHANNEL
    • Case Connection: COLLECTOR
    • Reverse Recovery Time: 60ns
    • Subcategory: Insulated Gate BIP Transistors
    • VCEsat-Max: 4 V
    • Additional Feature: HIGH SPEED
    • Gate Charge: 52nC
    • Base Part Number: IXG*10N100
    • Test Condition: 800V, 10A, 150 Ω, 15V
    • Mount: Through Hole
    • RoHS Status: RoHS Compliant
    • Part Status: Obsolete
    • Number of Terminations: 3
    • Qualification Status: Not Qualified
    • Transistor Element Material: SILICON
    • Terminal Position: SINGLE
    • Max Power Dissipation: 100W
    • Max Collector Current: 20A
    • Voltage - Rated DC: 1kV
    • Published: 1997
    • Voltage - Collector Emitter Breakdown (Max): 1000V
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Package / Case: TO-247-3
    • Turn On Time: 300 ns
    • Transistor Application: POWER CONTROL
    • JEDEC-95 Code: TO-247AD
    • Turn Off Time-Nom (toff): 1200 ns
    • Switching Energy: 2mJ (off)
    • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 10A
    • Td (on/off) @ 25°C: 100ns/550ns
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