Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
- Add To Cart
- Material flow:
- Payment:
Inventory:9
- Qty Unit Price price
- 1 $8.175 $8.175
- 10 $8.094 $80.94
- 100 $8.013 $801.3
- 1000 $7.933 $7933
- 10000 $7.854 $78540
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：IXTH6N120
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXTH6N120
- SKU：3912364
- Description：MOSFET N-CH 1200V 6A TO-247AD
User Guide
User Guide
IXTH6N120 Details
MOSFET N-CH 1200V 6A TO-247AD
IXTH6N120 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- Lead Free: Lead Free
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Pin Count: 3
- Reach Compliance Code: not_compliant
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Continuous Drain Current (ID): 6A
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Factory Lead Time: 28 Weeks
- Case Connection: DRAIN
- Pulsed Drain Current-Max (IDM): 24A
- Drain to Source Voltage (Vdss): 1200V
- Fall Time (Typ): 18 ns
- JEDEC-95 Code: TO-247AD
- Power Dissipation-Max: 300W Tc
- Resistance: 2.6Ohm
- Avalanche Energy Rating (Eas): 500 mJ
- Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- Qualification Status: Not Qualified
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Published: 2004
- Drain Current-Max (Abs) (ID): 6A
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Power Dissipation: 300W
- Drain to Source Breakdown Voltage: 1.2kV
- Package / Case: TO-247-3
- Additional Feature: AVALANCHE RATED
- Vgs(th) (Max) @ Id: 5V @ 250μA
- Rise Time: 33 ns
- Turn-Off Delay Time: 42 ns
- Current - Continuous Drain (Id) @ 25°C: 6A Tc
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
- Rds On (Max) @ Id, Vgs: 2.6 Ω @ 3A, 10V
Search for similar products
IXTH6N120 Similar Products
The four parts on the right have similar specifications to IXYS & IXTH6N120
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
