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- Manufacturer No：IXTQ69N30P
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXTQ69N30P
- SKU：3912589
- Description：MOSFET N-CH 300V 69A TO-3P
User Guide
User Guide
IXTQ69N30P Details
MOSFET N-CH 300V 69A TO-3P
IXTQ69N30P Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- Lead Free: Lead Free
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Pin Count: 3
- Drain to Source Breakdown Voltage: 300V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Factory Lead Time: 24 Weeks
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Case Connection: DRAIN
- Rise Time: 25 ns
- Turn-Off Delay Time: 75 ns
- Vgs(th) (Max) @ Id: 5V @ 250μA
- Fall Time (Typ): 27 ns
- Avalanche Energy Rating (Eas): 1500 mJ
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Series: PolarHT?
- Current - Continuous Drain (Id) @ 25°C: 69A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 4960pF @ 25V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- Qualification Status: Not Qualified
- Published: 2006
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Power Dissipation: 500W
- Subcategory: FET General Purpose Power
- Pulsed Drain Current-Max (IDM): 200A
- Additional Feature: AVALANCHE RATED
- Terminal Finish: Pure Tin (Sn)
- Package / Case: TO-3P-3, SC-65-3
- Continuous Drain Current (ID): 69A
- Power Dissipation-Max: 500W Tc
- Drain-source On Resistance-Max: 0.049Ohm
- Rds On (Max) @ Id, Vgs: 49m Ω @ 500mA, 10V
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