IXFH32N50QIXYS
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    • Manufacturer No：
      IXFH32N50Q
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      3912771
    • Description：
      MOSFET N-CH 500V 30A TO-247AD
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    • Manufacturer No：
      IXFH32N50Q
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IXFH32N50Q
    • SKU：
      3912771
    • Description：
      MOSFET N-CH 500V 30A TO-247AD

    User Guide

    User Guide

    IXFH32N50Q Details

    MOSFET N-CH 500V 30A TO-247AD

    IXFH32N50Q Specification Parameters

    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • RoHS Status: RoHS Compliant
    • Radiation Hardening: No
    • Part Status: Obsolete
    • Number of Terminations: 3
    • Pin Count: 3
    • Transistor Element Material: SILICON
    • Drain to Source Breakdown Voltage: 500V
    • Published: 2001
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • Subcategory: FET General Purpose Power
    • Package / Case: TO-247-3
    • Turn-Off Delay Time: 75 ns
    • Resistance: 160mOhm
    • Series: HiPerFET?
    • Power Dissipation: 416W
    • Power Dissipation-Max: 360W Tc
    • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4925pF @ 25V
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Pbfree Code: yes
    • Lead Free: Lead Free
    • Packaging: Tube
    • Number of Pins: 3
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Gate to Source Voltage (Vgs): 20V
    • Operating Temperature: -55°C~150°C TJ
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Case Connection: DRAIN
    • Fall Time (Typ): 20 ns
    • Continuous Drain Current (ID): 32A
    • Additional Feature: AVALANCHE RATED
    • JEDEC-95 Code: TO-247AD
    • Rise Time: 42ns
    • Current - Continuous Drain (Id) @ 25°C: 32A Tc
    • Vgs(th) (Max) @ Id: 4.5V @ 4mA
    • Rds On (Max) @ Id, Vgs: 160m Ω @ 16A, 10V
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