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- Manufacturer No：IXTA10P50P
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXTA10P50P
- SKU：3916460
- Description：MOSFET P-CH 500V 10A TO-263
User Guide
User Guide
IXTA10P50P Details
MOSFET P-CH 500V 10A TO-263
IXTA10P50P Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Pin Count: 4
- Terminal Form: GULL WING
- Published: 2009
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 500V
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Subcategory: Other Transistors
- Power Dissipation: 300W
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- FET Type: P-Channel
- Additional Feature: AVALANCHE RATED
- Power Dissipation-Max: 300W Tc
- Current - Continuous Drain (Id) @ 25°C: 10A Tc
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Series: PolarP?
- Rds On (Max) @ Id, Vgs: 1 Ω @ 5A, 10V
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Packaging: Tube
- Terminal Finish: Matte Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Continuous Drain Current (ID): 10A
- Operating Temperature: -55°C~150°C TJ
- Pulsed Drain Current-Max (IDM): 30A
- Operating Mode: ENHANCEMENT MODE
- Factory Lead Time: 28 Weeks
- JESD-30 Code: R-PSSO-G2
- Case Connection: DRAIN
- Resistance: 1Ohm
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Rise Time: 28 ns
- Fall Time (Typ): 44 ns
- Turn-Off Delay Time: 52 ns
- Drain to Source Breakdown Voltage: -500V
- Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 25V
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