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  • Manufacturer No:
    MID150-12A4
  • Manufacturer:
    IXYS
  • Category:
    Transistors - IGBTs - Modules
  • Datasheet:
    Get the PDF file
  • SKU:
    3916516
  • Description:
    Trans IGBT Module N-CH 1.2KV 180A 5-Pin Y3-DCB
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  • Manufacturer No:
    MID150-12A4
  • Manufacturer:
    IXYS
  • Category:
    Transistors - IGBTs - Modules
  • Datasheet:
    MID150-12A4
  • SKU:
    3916516
  • Description:
    Trans IGBT Module N-CH 1.2KV 180A 5-Pin Y3-DCB

MID150-12A4 Details

Trans IGBT Module N-CH 1.2KV 180A 5-Pin Y3-DCB

MID150-12A4 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Number of Elements: 1
  • NTC Thermistor: No
  • Number of Pins: 5
  • Transistor Element Material: SILICON
  • Input: Standard
  • Gate-Emitter Voltage-Max: 20V
  • Case Connection: ISOLATED
  • Terminal Form: UNSPECIFIED
  • Operating Temperature: 150°C TJ
  • Terminal Position: UPPER
  • Mount: Chassis Mount, Screw
  • Collector Emitter Voltage (VCEO): 1.2kV
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Transistor Application: POWER CONTROL
  • VCEsat-Max: 3 V
  • IGBT Type: NPT
  • Length: 110mm
  • Max Power Dissipation: 760W
  • Turn Off Time-Nom (toff): 570 ns
  • Input Capacitance: 6.6nF
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
  • RoHS Status: ROHS3 Compliant
  • Packaging: Bulk
  • Pbfree Code: yes
  • Number of Terminations: 5
  • Mounting Type: Chassis Mount
  • Configuration: Single
  • Pin Count: 7
  • Published: 2000
  • Height: 30mm
  • Additional Feature: UL RECOGNIZED
  • Factory Lead Time: 32 Weeks
  • Polarity/Channel Type: N-CHANNEL
  • Collector Emitter Breakdown Voltage: 1.2kV
  • Collector Emitter Saturation Voltage: 1.2kV
  • Current - Collector Cutoff (Max): 7.5mA
  • Subcategory: Insulated Gate BIP Transistors
  • Max Collector Current: 180A
  • Width: 62mm
  • Turn On Time: 170 ns
  • Power - Max: 760W
  • Base Part Number: MID
  • Package / Case: Y3-DCB
  • Input Capacitance (Cies) @ Vce: 6.6nF @ 25V

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