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- Manufacturer No：M29W800DB45N6E
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：M29W800DB45N6E
- SKU：3921622
- Description：EAR99 Surface Mount M29W800 Tray ic memory 45ns 12mm 10mA 8Mb
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User Guide
M29W800DB45N6E Details
EAR99 Surface Mount M29W800 Tray ic memory 45ns 12mm 10mA 8Mb
M29W800DB45N6E Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Functions: 1
- Pbfree Code: yes
- Surface Mount: YES
- Data Polling: YES
- Ready/Busy: YES
- JESD-609 Code: e3
- Alternate Memory Width: 8
- Supply Voltage: 3.3V
- Packaging: Tray
- Termination: SMD/SMT
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Operating Temperature: -40°C~85°C TA
- Factory Lead Time: 20 Weeks
- Number of Terminations: 48
- Pin Count: 48
- Voltage: 2.7V
- Height Seated (Max): 1.2mm
- Nominal Supply Current: 10mA
- Width: 12mm
- Sync/Async: Asynchronous
- HTS Code: 8542.32.00.51
- Length: 18.4mm
- Standby Current-Max: 0.0001A
- Sector Size: 16K8K32K64K
- Organization: 512KX16
- Memory Size: 8Mb 1M x 8 512K x 16
- Base Part Number: M29W800
- Mounting Type: Surface Mount
- ECCN Code: EAR99
- Radiation Hardening: No
- Command User Interface: YES
- Toggle Bit: YES
- Common Flash Interface: YES
- Part Status: Obsolete
- Terminal Position: DUAL
- Power Supplies: 3.3V
- Memory Width: 16
- REACH SVHC: No SVHC
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Published: 2008
- Terminal Pitch: 0.5mm
- Memory Format: FLASH
- Number of Pins: 48
- Boot Block: BOTTOM
- Memory Interface: Parallel
- Terminal Finish: MATTE TIN
- Memory Type: Non-Volatile
- Voltage - Supply: 2.7V~3.6V
- Technology: FLASH - NOR
- Access Time (Max): 45 ns
- Write Cycle Time - Word, Page: 45ns
- Package / Case: 48-TFSOP (0.724, 18.40mm Width)
- Density: 8 Mb
- Additional Feature: BOTTOM BOOT BLOCK
- Number of Sectors/Size: 12115
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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