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- Manufacturer No：M29W160EB80ZA3SE
- Manufacturer：Micron
- Category：Memory
- Datasheet：M29W160EB80ZA3SE
- SKU：3922010
- Description：EAR99 Surface Mount Tray 1MX16 ic memory 80ns 6mm 10mA 16Mb
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M29W160EB80ZA3SE Details
EAR99 Surface Mount Tray 1MX16 ic memory 80ns 6mm 10mA 16Mb
M29W160EB80ZA3SE Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Functions: 1
- Pbfree Code: yes
- Surface Mount: YES
- Data Polling: YES
- Ready/Busy: YES
- Alternate Memory Width: 8
- Published: 2013
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Part Status: Not For New Designs
- Number of Terminations: 48
- Pin Count: 48
- Boot Block: BOTTOM
- Terminal Pitch: 0.8mm
- Height Seated (Max): 1.2mm
- Width: 6mm
- Operating Temperature: -40°C~125°C TA
- Length: 8mm
- Contact Plating: Copper, Silver, Tin
- Technology: FLASH - NOR
- Terminal Finish: TIN SILVER COPPER
- Access Time (Max): 80 ns
- Package / Case: 48-TFBGA
- Write Cycle Time - Word, Page: 80ns
- Sector Size: 16K8K32K64K
- Memory Size: 16Mb 2M x 8 1M x 16
- Mounting Type: Surface Mount
- ECCN Code: EAR99
- Radiation Hardening: No
- Command User Interface: YES
- Toggle Bit: YES
- Common Flash Interface: YES
- Packaging: Tray
- Memory Width: 16
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Supply Voltage: 3V
- Memory Format: FLASH
- Number of Pins: 48
- Terminal Position: BOTTOM
- Voltage: 2.7V
- Memory Interface: Parallel
- JESD-609 Code: e1
- Nominal Supply Current: 10mA
- Memory Type: Non-Volatile
- Voltage - Supply: 2.7V~3.6V
- Sync/Async: Asynchronous
- HTS Code: 8542.32.00.51
- Power Supplies: 3/3.3V
- Standby Current-Max: 0.0001A
- Organization: 1MX16
- Density: 16 Mb
- Additional Feature: BOTTOM BOOT BLOCK
- Number of Sectors/Size: 12131
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Micron — Manufacturer Introduction
Micron Technology is a world leader in innovative memory solutions that transform how theworld uses Information. Through our global brands - Micron, Crucial and Ballistix - weoffer the industry's broadest portfolio, and are the only company that manufactures today'smajor memory and storage technologies: DRAM, NAND, NOR, and 3D XPoint memory.
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