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  • Manufacturer No:
    M29F040B70N6
  • Manufacturer:
  • Category:
    Memory
  • Datasheet:
  • SKU:
    3922360
  • Description:
    Asynchronous Obsolete 2002 Parallel FLASH Memory 85C 5.5V 4Mb 15mA
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  • Manufacturer No:
    M29F040B70N6
  • Manufacturer:
    Micron Technology Inc.
  • Category:
    Memory
  • Datasheet:
    M29F040B70N6
  • SKU:
    3922360
  • Description:
    Asynchronous Obsolete 2002 Parallel FLASH Memory 85C 5.5V 4Mb 15mA

M29F040B70N6 Details

Asynchronous Obsolete 2002 Parallel FLASH Memory 85C 5.5V 4Mb 15mA

M29F040B70N6 Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mount: Surface Mount
  • Operating Supply Voltage: 5V
  • Min Operating Temperature: -40°C
  • Moisture Sensitivity Level (MSL): 3 (168 Hours)
  • Number of Pins: 32
  • Memory Format: FLASH
  • Min Supply Voltage: 4.5V
  • Interface: Parallel
  • Memory Type: Non-Volatile
  • Nominal Supply Current: 15mA
  • Technology: FLASH - NOR
  • Access Time: 70ns
  • Memory Size: 4Mb 512K x 8
  • Package / Case: 32-TFSOP (0.724, 18.40mm Width)
  • Base Part Number: M29F040
  • Mounting Type: Surface Mount
  • Part Status: Obsolete
  • Packaging: Tray
  • Max Operating Temperature: 85°C
  • Max Supply Voltage: 5.5V
  • Operating Temperature: -40°C~85°C TA
  • Published: 2002
  • Memory Interface: Parallel
  • Voltage - Supply: 4.5V~5.5V
  • Word Size: 8b
  • Sync/Async: Asynchronous
  • Write Cycle Time - Word, Page: 70ns
  • Density: 4 Mb
  • Address Bus Width: 19b
  • Supplier Device Package: 32-TSOP

Micron Technology Inc. — Manufacturer Introduction

In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.

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