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  • Manufacturer No:
    M29W640FB70ZA6E
  • Manufacturer:
  • Category:
    Memory
  • Datasheet:
    Get the PDF file
  • SKU:
    3922531
  • Description:
    Asynchronous Obsolete Copper Silver Tin BOTTOM FLASH Memory -40C~85C TA 3/3.3V 64Mb 10mA
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  • Manufacturer No:
    M29W640FB70ZA6E
  • Manufacturer:
    Micron Technology Inc.
  • Category:
    Memory
  • Datasheet:
    M29W640FB70ZA6E
  • SKU:
    3922531
  • Description:
    Asynchronous Obsolete Copper Silver Tin BOTTOM FLASH Memory -40C~85C TA 3/3.3V 64Mb 10mA

M29W640FB70ZA6E Details

Asynchronous Obsolete Copper Silver Tin BOTTOM FLASH Memory -40C~85C TA 3/3.3V 64Mb 10mA

M29W640FB70ZA6E Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Number of Functions: 1
  • Radiation Hardening: No
  • Command User Interface: YES
  • Toggle Bit: YES
  • Common Flash Interface: YES
  • Part Status: Obsolete
  • Packaging: Tray
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 30
  • Published: 2008
  • Memory Format: FLASH
  • Number of Pins: 48
  • Terminal Position: BOTTOM
  • Voltage: 2.7V
  • Memory Interface: Parallel
  • JESD-609 Code: e1
  • Nominal Supply Current: 10mA
  • Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
  • Voltage - Supply: 2.7V~3.6V
  • Sync/Async: Asynchronous
  • HTS Code: 8542.32.00.51
  • Access Time (Max): 70 ns
  • ECCN Code: 3A991.B.1.A
  • Package / Case: 48-TFBGA
  • Density: 64 Mb
  • Memory Size: 64Mb 8M x 8 4M x 16
  • Page Size: 4/8words
  • Base Part Number: M29W640
  • Mounting Type: Surface Mount
  • Pbfree Code: yes
  • Surface Mount: YES
  • Data Polling: YES
  • Ready/Busy: YES
  • Lead Free: Lead Free
  • Alternate Memory Width: 8
  • Memory Width: 16
  • Moisture Sensitivity Level (MSL): 3 (168 Hours)
  • Supply Voltage: 3V
  • Operating Temperature: -40°C~85°C TA
  • Number of Terminations: 48
  • Pin Count: 48
  • Boot Block: BOTTOM
  • Terminal Pitch: 0.8mm
  • Height Seated (Max): 1.2mm
  • Width: 6mm
  • Memory Type: Non-Volatile
  • Length: 8mm
  • Contact Plating: Copper, Silver, Tin
  • Technology: FLASH - NOR
  • Power Supplies: 3/3.3V
  • Write Cycle Time - Word, Page: 70ns
  • Standby Current-Max: 0.0001A
  • Organization: 4MX16
  • Additional Feature: BOTTOM BOOT BLOCK
  • Sector Size: 8K64K
  • Number of Sectors/Size: 8127

Micron Technology Inc. — Manufacturer Introduction

In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.

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