Add to like
Add to project list
MT29F4G16ABBDAH4-IT:D123
  • Manufacturer No:
    MT29F4G16ABBDAH4-IT:D
  • Manufacturer:
  • Category:
    Memory
  • Datasheet:
    Get the PDF file
  • SKU:
    3922642
  • Description:
    Asynchronous Active 2011 BOTTOM ic memory -40C~85C TA 1.7V 4Gb 20mA
  • Quantity:
      • RFQ
      • Add To Cart
  • Material flow:
  • Payment:
Inventory:1192
  • Qty Unit Price price
  • 1 $920.937 $920.937
  • 10 $911.818 $9118.18
  • 100 $902.79 $90279
  • 1000 $893.851 $893851
  • 10000 $885 $8850000

Not the price you want? Send RFQ Now and we'll contact you ASAP

MT29F4G16ABBDAH4-IT:D
  • Manufacturer No:
    MT29F4G16ABBDAH4-IT:D
  • Manufacturer:
    Micron Technology Inc.
  • Category:
    Memory
  • Datasheet:
    MT29F4G16ABBDAH4-IT:D
  • SKU:
    3922642
  • Description:
    Asynchronous Active 2011 BOTTOM ic memory -40C~85C TA 1.7V 4Gb 20mA

MT29F4G16ABBDAH4-IT:D Details

Asynchronous Active 2011 BOTTOM ic memory -40C~85C TA 1.7V 4Gb 20mA

MT29F4G16ABBDAH4-IT:D Specification Parameters

  • Part Status: Active
  • Data Polling: NO
  • Packaging: Bulk
  • Mount: Surface Mount
  • Pbfree Code: yes
  • Command User Interface: YES
  • Memory Width: 16
  • Published: 2011
  • Moisture Sensitivity Level (MSL): 3 (168 Hours)
  • Supply Voltage: 1.8V
  • Operating Temperature: -40°C~85°C TA
  • Memory Format: FLASH
  • Terminal Pitch: 0.8mm
  • Nominal Supply Current: 20mA
  • Memory Type: Non-Volatile
  • Supply Voltage-Min (Vsup): 1.7V
  • Sync/Async: Asynchronous
  • HTS Code: 8542.32.00.51
  • Number of Pins: 63
  • Supply Voltage-Max (Vsup): 1.95V
  • Page Size: 2kB
  • Voltage - Supply: 1.7V~1.95V
  • Address Bus Width: 1b
  • Package / Case: 63-VFBGA
  • Memory Size: 4Gb 256M x 16
  • Organization: 256MX16
  • Toggle Bit: NO
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Number of Functions: 1
  • Radiation Hardening: No
  • Ready/Busy: YES
  • Peak Reflow Temperature (Cel): 260
  • Factory Lead Time: 4 Weeks
  • Time@Peak Reflow Temperature-Max (s): 30
  • Operating Supply Voltage: 1.8V
  • Height Seated (Max): 1mm
  • Terminal Position: BOTTOM
  • Memory Interface: Parallel
  • JESD-609 Code: e1
  • Length: 11mm
  • Word Size: 16b
  • Access Time: 25 ns
  • Number of Terminations: 63
  • Terminal Finish: TIN SILVER COPPER
  • Technology: FLASH - NAND
  • ECCN Code: 3A991.B.1.A
  • Standby Current-Max: 0.00005A
  • Sector Size: 64K
  • Number of Sectors/Size: 4K
  • Density: 4 Gb
  • Base Part Number: MT29F4G16

Micron Technology Inc. — Manufacturer Introduction

Micron Technology Inc.
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.

Excellent

Based on reviews

Excellent

Based on reviews

LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.
Our social media
We support logistics
We Accept Payment Via