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- Manufacturer No：M25P128-VME6GB
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：M25P128-VME6GB
- SKU：3922964
- Description：Surface Mount M25P128 Tray FLASH - NOR ic memory 54MHz 8ns 1mm 20mA
User Guide
User Guide
M25P128-VME6GB Details
Surface Mount M25P128 Tray FLASH - NOR ic memory 54MHz 8ns 1mm 20mA
M25P128-VME6GB Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mount: Surface Mount
- Pbfree Code: yes
- Part Status: Obsolete
- Number of Terminations: 8
- Memory Width: 8
- Operating Supply Voltage: 3.3V
- Peak Reflow Temperature (Cel): 260
- Data Retention Time-Min: 20
- Time@Peak Reflow Temperature-Max (s): 30
- Terminal Pitch: 1.27mm
- Height: 1mm
- Voltage: 2.7V
- Memory Type: Non-Volatile
- Serial Bus Type: SPI
- Voltage - Supply: 2.7V~3.6V
- Sync/Async: Synchronous
- Clock Frequency: 54MHz
- Write Protection: HARDWARE/SOFTWARE
- Standby Current-Max: 0.0001A
- Address Bus Width: 1b
- Endurance: 10000 Write/Erase Cycles
- Base Part Number: M25P128
- Mounting Type: Surface Mount
- Number of Functions: 1
- Radiation Hardening: No
- Number of Pins: 8
- Pin Count: 8
- Terminal Position: DUAL
- Packaging: Tray
- Ambient Temperature Range High: 85°C
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Supply Voltage: 3V
- Operating Temperature: -40°C~85°C TA
- Memory Format: FLASH
- Nominal Supply Current: 20mA
- Memory Interface: SPI
- Word Size: 8b
- Parallel/Serial: SERIAL
- Technology: FLASH - NOR
- Access Time: 8 ns
- Package / Case: 8-VDFN Exposed Pad
- Memory Size: 128Mb 16M x 8
- Density: 128 Mb
- Write Cycle Time - Word, Page: 15ms, 5ms
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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