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- Manufacturer No：MT46V128M4BN-6:F
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：MT46V128M4BN-6:F
- SKU：3923421
- Description：EAR99 Surface Mount MT46V128M4 Tray ic memory 167MHz 700ps 12.5mm 175mA
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MT46V128M4BN-6:F Details
EAR99 Surface Mount MT46V128M4 Tray ic memory 167MHz 700ps 12.5mm 175mA
MT46V128M4BN-6:F Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mount: Surface Mount
- Number of Ports: 1
- Lead Free: Lead Free
- Memory Width: 4
- Qualification Status: Not Qualified
- Reach Compliance Code: unknown
- Operating Supply Voltage: 2.5V
- Time@Peak Reflow Temperature-Max (s): 30
- Terminal Pitch: 1mm
- Supply Voltage-Max (Vsup): 2.7V
- Number of Terminations: 60
- Memory Interface: Parallel
- JESD-609 Code: e1
- Output Characteristics: 3-STATE
- Length: 12.5mm
- Operating Mode: SYNCHRONOUS
- Memory Format: DRAM
- Refresh Cycles: 8192
- Nominal Supply Current: 175mA
- Standby Current-Max: 0.005A
- Clock Frequency: 167MHz
- Interleaved Burst Length: 248
- Technology: SDRAM - DDR
- Package / Case: 60-TFBGA
- HTS Code: 8542.32.00.28
- Memory Size: 512Mb 128M x 4
- Mounting Type: Surface Mount
- Number of Functions: 1
- ECCN Code: EAR99
- Part Status: Obsolete
- Packaging: Tray
- Peak Reflow Temperature (Cel): 260
- Supply Voltage: 2.5V
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Published: 2009
- Terminal Position: BOTTOM
- Number of Pins: 60
- Pin Count: 60
- Height Seated (Max): 1.2mm
- Operating Temperature: 0°C~70°C TA
- Memory Type: Volatile
- Supply Voltage-Min (Vsup): 2.3V
- I/O Type: COMMON
- Write Cycle Time - Word, Page: 15ns
- Terminal Finish: TIN SILVER COPPER
- Additional Feature: AUTO/SELF REFRESH
- Voltage - Supply: 2.3V~2.7V
- Sequential Burst Length: 248
- Address Bus Width: 15b
- Access Time: 700ps
- Density: 512 Mb
- Organization: 128MX4
- Base Part Number: MT46V128M4
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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