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- Manufacturer No：M29F800FB5AN6E2
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：M29F800FB5AN6E2
- SKU：3925952
- Description：EAR99 Surface Mount M29F800 Tray ic memory 55ns 12mm 20mA 8Mb
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M29F800FB5AN6E2 Details
EAR99 Surface Mount M29F800 Tray ic memory 55ns 12mm 20mA 8Mb
M29F800FB5AN6E2 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Functions: 1
- Pbfree Code: yes
- Surface Mount: YES
- Data Polling: YES
- Ready/Busy: YES
- JESD-609 Code: e3
- Part Status: Obsolete
- Terminal Position: DUAL
- Operating Supply Voltage: 5V
- Packaging: Tray
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Operating Temperature: -40°C~85°C TA
- Memory Format: FLASH
- Number of Terminations: 48
- Pin Count: 48
- Voltage: 4.5V
- Nominal Supply Current: 20mA
- Voltage - Supply: 4.5V~5.5V
- Width: 12mm
- Sync/Async: Asynchronous
- HTS Code: 8542.32.00.51
- Write Cycle Time - Word, Page: 55ns
- Package / Case: 48-TFSOP (0.724, 18.40mm Width)
- Density: 8 Mb
- Additional Feature: BOTTOM BOOT BLOCK
- Number of Sectors/Size: 12115
- Base Part Number: M29F800
- Mounting Type: Surface Mount
- ECCN Code: EAR99
- Radiation Hardening: No
- Command User Interface: YES
- Toggle Bit: YES
- Common Flash Interface: YES
- Contact Plating: Tin
- Alternate Memory Width: 8
- Supply Voltage: 5V
- Power Supplies: 5V
- Memory Width: 16
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Published: 2009
- Terminal Pitch: 0.5mm
- Factory Lead Time: 5 Weeks
- Number of Pins: 48
- Boot Block: BOTTOM
- Memory Interface: Parallel
- Height Seated (Max): 1.2mm
- Memory Type: Non-Volatile
- Screening Level: AEC-Q100
- Technology: FLASH - NOR
- Access Time (Max): 55 ns
- Length: 18.4mm
- Sector Size: 16K8K32K64K
- Organization: 512KX16
- Memory Size: 8Mb 1M x 8 512K x 16
- Standby Current-Max: 0.00012A
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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