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- Manufacturer No：MT29C4G48MAYBBAKS-48 IT
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：MT29C4G48MAYBBAKS-48 IT
- SKU：3926238
- Description：Active BALL MEMORY CIRCUIT BOTTOM ic memory 85C 1.7V 4294967296bit 10.5mm
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MT29C4G48MAYBBAKS-48 IT Details
Active BALL MEMORY CIRCUIT BOTTOM ic memory 85C 1.7V 4294967296bit 10.5mm
MT29C4G48MAYBBAKS-48 IT Specification Parameters
- Part Status: Active
- Number of Functions: 1
- Memory Width: 8
- Packaging: Tray
- Technology: CMOS
- Operating Temperature (Max): 85°C
- Time@Peak Reflow Temperature-Max (s): 30
- Height Seated (Max): 1mm
- Terminal Position: BOTTOM
- Terminal Form: BALL
- Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
- Length: 13mm
- Width: 10.5mm
- HTS Code: 8542.32.00.71
- Memory IC Type: MEMORY CIRCUIT
- Number of Terminations: 137
- Additional Feature: IT IS ALSO HAVING 2GBIT (X 32) LPDDR
- RoHS Status: ROHS3 Compliant
- Surface Mount: YES
- Factory Lead Time: 12 Weeks
- Operating Temperature (Min): -40°C
- Peak Reflow Temperature (Cel): 260
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Supply Voltage: 1.8V
- Temperature Grade: INDUSTRIAL
- Terminal Pitch: 0.8mm
- JESD-609 Code: e1
- Supply Voltage-Min (Vsup): 1.7V
- Operating Mode: SYNCHRONOUS
- Supply Voltage-Max (Vsup): 1.95V
- Memory Density: 4294967296 bit
- Organization: 512MX8
- JESD-30 Code: R-PBGA-B137
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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