Add to like
Add to project list
JS28F00AM29EWHB TR123
Inventory:0
  • Qty Unit Price price

Not the price you want? Send RFQ Now and we'll contact you ASAP

JS28F00AM29EWHB TR
  • Manufacturer No:
    JS28F00AM29EWHB TR
  • Manufacturer:
    Micron Technology Inc.
  • Category:
    Memory
  • Datasheet:
    JS28F00AM29EWHB TR
  • SKU:
    3926399
  • Description:
    IC FLASH 1G PARALLEL 56TSOP

JS28F00AM29EWHB TR Details

IC FLASH 1G PARALLEL 56TSOP

JS28F00AM29EWHB TR Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Packaging: Tape & Reel (TR)
  • Published: 2015
  • Operating Temperature: -40°C~85°C TA
  • Memory Interface: Parallel
  • Voltage - Supply: 2.7V~3.6V
  • Write Cycle Time - Word, Page: 110ns
  • Memory Size: 1Gb 128M x 8 64M x 16
  • Mounting Type: Surface Mount
  • Part Status: Obsolete
  • Moisture Sensitivity Level (MSL): 3 (168 Hours)
  • Memory Format: FLASH
  • Memory Type: Non-Volatile
  • Technology: FLASH - NOR
  • Package / Case: 56-TFSOP (0.724, 18.40mm Width)

Micron Technology Inc. — Manufacturer Introduction

Micron Technology Inc.
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.

Excellent

Based on reviews

Excellent

Based on reviews

LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.
Our social media
We support logistics
We Accept Payment Via