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- Manufacturer No：M28W320FCT70N6E
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：M28W320FCT70N6E
- SKU：3926588
- Description：3A991.B.1.A Surface Mount M28W320 Tray ic memory 70ns 18.4mm 18mA 32Mb
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M28W320FCT70N6E Details
3A991.B.1.A Surface Mount M28W320 Tray ic memory 70ns 18.4mm 18mA 32Mb
M28W320FCT70N6E Specification Parameters
- Toggle Bit: NO
- RoHS Status: ROHS3 Compliant
- Mount: Surface Mount
- Pbfree Code: yes
- Command User Interface: YES
- JESD-609 Code: e3
- Part Status: Obsolete
- Packaging: Tray
- Peak Reflow Temperature (Cel): 260
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Supply Voltage: 3V
- Published: 2008
- Terminal Pitch: 0.5mm
- Number of Terminations: 48
- Pin Count: 48
- Supply Voltage-Min (Vsup): 2.7V
- Height Seated (Max): 1.2mm
- Voltage - Supply: 2.7V~3.6V
- Sync/Async: Asynchronous
- Technology: FLASH - NOR
- Power Supplies: 3/3.3V
- Write Cycle Time - Word, Page: 70ns
- Length: 18.4mm
- Package / Case: 48-TFSOP (0.724, 18.40mm Width)
- Address Bus Width: 21b
- Density: 32 Mb
- Number of Sectors/Size: 863
- Sector Size: 4K32K
- Data Polling: NO
- Mounting Type: Surface Mount
- Number of Functions: 1
- Radiation Hardening: No
- Common Flash Interface: YES
- Contact Plating: Tin
- Terminal Position: DUAL
- Memory Width: 16
- Factory Lead Time: 4 Weeks
- Time@Peak Reflow Temperature-Max (s): 30
- Programming Voltage: 3V
- Operating Temperature: -40°C~85°C TA
- Memory Format: FLASH
- Number of Pins: 48
- Supply Voltage-Max (Vsup): 3.6V
- Memory Interface: Parallel
- Memory Type: Non-Volatile
- Word Size: 16b
- Nominal Supply Current: 18mA
- HTS Code: 8542.32.00.51
- Access Time (Max): 70 ns
- Standby Current-Max: 0.000005A
- ECCN Code: 3A991.B.1.A
- Boot Block: TOP
- Organization: 2MX16
- Additional Feature: TOP BOOT BLOCK
- Memory Size: 32Mb 2M x 16
- Base Part Number: M28W320
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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