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- Manufacturer No：JS28F128P30BF75A
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：JS28F128P30BF75A
- SKU：3927122
- Description：3A991.B.1.A Surface Mount 28F128P30 Tray ic memory 40MHz 75ns 18.4mm 28mA
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JS28F128P30BF75A Details
3A991.B.1.A Surface Mount 28F128P30 Tray ic memory 40MHz 75ns 18.4mm 28mA
JS28F128P30BF75A Specification Parameters
- Toggle Bit: NO
- RoHS Status: ROHS3 Compliant
- Number of Functions: 1
- Radiation Hardening: No
- JESD-609 Code: e3
- Terminal Position: DUAL
- Memory Width: 16
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Supply Voltage: 1.8V
- Operating Temperature: -40°C~85°C TA
- Memory Format: FLASH
- Memory Interface: Parallel
- Number of Terminations: 56
- Pin Count: 56
- Terminal Finish: MATTE TIN
- Clock Frequency: 40MHz
- Word Size: 16b
- Sync/Async: Asynchronous
- HTS Code: 8542.32.00.51
- Nominal Supply Current: 28mA
- ECCN Code: 3A991.B.1.A
- Interface: Parallel, Serial
- Power Supplies: 1.81.8/3.3V
- Density: 128 Mb
- Organization: 8MX16
- Sector Size: 16K64K
- Page Size: 8words
- Standby Current-Max: 0.000055A
- Data Polling: NO
- Mounting Type: Surface Mount
- Pbfree Code: yes
- Surface Mount: YES
- Part Status: Obsolete
- Packaging: Tray
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Operating Supply Voltage: 1.8V
- Terminal Pitch: 0.5mm
- Boot Block: BOTTOM
- Published: 2003
- Number of Pins: 56
- Height Seated (Max): 1.2mm
- Memory Type: Non-Volatile
- Voltage: 1.7V
- Contact Plating: Gold, Tin
- Technology: FLASH - NOR
- Access Time (Max): 75 ns
- Length: 18.4mm
- Write Cycle Time - Word, Page: 75ns
- Voltage - Supply: 1.7V~2V
- Package / Case: 56-TFSOP (0.724, 18.40mm Width)
- Memory Size: 128Mb 8M x 16
- Series: StrataFlash?
- Address Bus Width: 23b
- Number of Sectors/Size: 4127
- Base Part Number: 28F128P30
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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