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- Manufacturer No：M29W128GSH70ZA6E
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：M29W128GSH70ZA6E
- SKU：3927163
- Description：Obsolete 2013 BOTTOM Non-Volatile ic memory -40C~85C TA 3/3.3V 128Mb 0.0001A
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M29W128GSH70ZA6E Details
Obsolete 2013 BOTTOM Non-Volatile ic memory -40C~85C TA 3/3.3V 128Mb 0.0001A
M29W128GSH70ZA6E Specification Parameters
- RoHS Status: ROHS3 Compliant
- Radiation Hardening: No
- Command User Interface: YES
- Toggle Bit: YES
- Common Flash Interface: YES
- Alternate Memory Width: 8
- Published: 2013
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Terminal Pitch: 1mm
- Terminal Position: BOTTOM
- Number of Pins: 64
- Memory Interface: Parallel
- Number of Sectors/Size: 128
- Technology: FLASH - NOR
- Access Time (Max): 70 ns
- Supply Current-Max: 0.02mA
- Sector Size: 128K
- Organization: 8MX16
- Package / Case: 64-TBGA
- Base Part Number: M29W128
- Mounting Type: Surface Mount
- Surface Mount: YES
- Data Polling: YES
- Ready/Busy: YES
- Part Status: Obsolete
- Packaging: Tray
- Memory Width: 16
- Operating Temperature: -40°C~85°C TA
- Memory Format: FLASH
- Number of Terminations: 64
- Voltage: 2.7V
- Memory Type: Non-Volatile
- Voltage - Supply: 2.7V~3.6V
- Power Supplies: 3/3.3V
- Write Cycle Time - Word, Page: 70ns
- Standby Current-Max: 0.0001A
- Density: 128 Mb
- Page Size: 8/16words
- Memory Size: 128Mb 16M x 8 8M x 16
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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