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- Manufacturer No：MT47H64M16NF-25E:M
- Manufacturer：Micron
- Category：Memory
- Datasheet：MT47H64M16NF-25E:M
- SKU：3930785
- Description：EAR99 Surface Mount MT47H64M16 Tray ic memory 400MHz 400ps 1.2mm 1Gb
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User Guide
MT47H64M16NF-25E:M Details
EAR99 Surface Mount MT47H64M16 Tray ic memory 400MHz 400ps 1.2mm 1Gb
MT47H64M16NF-25E:M Specification Parameters
- Part Status: Active
- Mounting Type: Surface Mount
- Number of Functions: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Published: 2013
- Factory Lead Time: 16 Weeks
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Supply Voltage: 1.8V
- Interleaved Burst Length: 48
- Terminal Position: BOTTOM
- Memory Interface: Parallel
- JESD-609 Code: e1
- Memory Type: Volatile
- Supply Voltage-Min (Vsup): 1.7V
- Number of Terminations: 84
- Pin Count: 84
- Address Bus Width: 16b
- Supply Voltage-Max (Vsup): 1.9V
- Clock Frequency: 400MHz
- Voltage - Supply: 1.7V~1.9V
- Refresh Cycles: 8192
- Technology: SDRAM - DDR2
- Organization: 64MX16
- Package / Case: 84-TFBGA
- HTS Code: 8542.32.00.32
- Additional Feature: SELF REFRESH
- RoHS Status: ROHS3 Compliant
- Mount: Surface Mount
- Number of Ports: 1
- Pbfree Code: yes
- Packaging: Tray
- Memory Width: 16
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Operating Supply Voltage: 1.8V
- Sequential Burst Length: 48
- Terminal Pitch: 0.8mm
- Height: 1.2mm
- Output Characteristics: 3-STATE
- Length: 12.5mm
- Contact Plating: Copper, Silver, Tin
- Number of Pins: 84
- Data Bus Width: 16b
- I/O Type: COMMON
- Memory Format: DRAM
- Write Cycle Time - Word, Page: 15ns
- Terminal Finish: Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
- Operating Temperature: 0°C~85°C TC
- Memory Size: 1Gb 64M x 16
- Access Time: 400ps
- Density: 1 Gb
- Base Part Number: MT47H64M16
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Micron — Manufacturer Introduction
Micron Technology is a world leader in innovative memory solutions that transform how theworld uses Information. Through our global brands - Micron, Crucial and Ballistix - weoffer the industry's broadest portfolio, and are the only company that manufactures today'smajor memory and storage technologies: DRAM, NAND, NOR, and 3D XPoint memory.
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