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- Manufacturer No：MT8HTF12864HDZ-800M1
- Manufacturer：Micron Technology Inc.
- Category：Memory - Modules
- Datasheet：MT8HTF12864HDZ-800M1
- SKU：3930950
- Description：DUAL Obsolete COMMERCIAL DUAL BANK PAGE BURST Memory Module 64b 1.8V 67.6mm 400MHz
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MT8HTF12864HDZ-800M1 Details
DUAL Obsolete COMMERCIAL DUAL BANK PAGE BURST Memory Module 64b 1.8V 67.6mm 400MHz
MT8HTF12864HDZ-800M1 Specification Parameters
- Surface Mount: NO
- Number of Functions: 1
- ECCN Code: EAR99
- Part Status: Obsolete
- Temperature Grade: COMMERCIAL
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Published: 2014
- Operating Supply Voltage: 1.8V
- Min Operating Temperature: 0°C
- Number of Terminations: 200
- Supply Voltage-Max (Vsup): 1.9V
- Memory Type: DDR2 SDRAM
- Data Bus Width: 64b
- Height Seated (Max): 30.15mm
- Memory Density: 8589934592 bit
- Speed: 800MT/s
- Organization: 128MX64
- RoHS Status: ROHS3 Compliant
- Number of Ports: 1
- Radiation Hardening: No
- Terminal Position: DUAL
- Technology: CMOS
- Max Operating Temperature: 70°C
- Supply Voltage: 1.8V
- Memory Width: 64
- Number of Pins: 200
- Supply Voltage-Min (Vsup): 1.7V
- Max Frequency: 400MHz
- Memory Size: 1GB
- HTS Code: 8542.32.00.36
- Package / Case: 200-SODIMM
- Access Mode: DUAL BANK PAGE BURST
- Length: 67.6mm
- Additional Feature: PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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