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- Manufacturer No：MT41J64M16JT-15E IT:G
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：MT41J64M16JT-15E IT:G
- SKU：3931822
- Description：EAR99 Surface Mount MT41J64M16 Tray ic memory 667MHz 0.125ns 8mm 0.012A
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MT41J64M16JT-15E IT:G Details
EAR99 Surface Mount MT41J64M16 Tray ic memory 667MHz 0.125ns 8mm 0.012A
MT41J64M16JT-15E IT:G Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Functions: 1
- ECCN Code: EAR99
- Surface Mount: YES
- Interleaved Burst Length: 8
- Packaging: Tray
- Memory Width: 16
- Published: 2011
- Time@Peak Reflow Temperature-Max (s): 30
- Terminal Pitch: 0.8mm
- Height Seated (Max): 1.2mm
- Length: 14mm
- Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
- Supply Voltage: 1.5V
- Memory Type: Volatile
- Pin Count: 96
- I/O Type: COMMON
- Refresh Cycles: 8192
- Additional Feature: AUTO/SELF REFRESH
- Supply Voltage-Min (Vsup): 1.425V
- Package / Case: 96-TFBGA
- Operating Temperature: -40°C~95°C TC
- Memory Size: 1Gb 64M x 16
- JESD-30 Code: R-PBGA-B96
- Standby Current-Max: 0.012A
- Supply Current-Max: 0.265mA
- Access Time (Max): 0.125 ns
- Mounting Type: Surface Mount
- Number of Ports: 1
- Pbfree Code: yes
- Part Status: Obsolete
- Sequential Burst Length: 8
- Qualification Status: Not Qualified
- Peak Reflow Temperature (Cel): 260
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Terminal Position: BOTTOM
- Memory Interface: Parallel
- JESD-609 Code: e1
- Output Characteristics: 3-STATE
- Width: 8mm
- Power Supplies: 1.5V
- Number of Terminations: 96
- Operating Mode: SYNCHRONOUS
- Memory Format: DRAM
- Voltage - Supply: 1.425V~1.575V
- Supply Voltage-Max (Vsup): 1.575V
- Clock Frequency: 667MHz
- Memory Density: 1073741824 bit
- Technology: SDRAM - DDR3
- Organization: 64MX16
- HTS Code: 8542.32.00.32
- Access Mode: MULTI BANK PAGE BURST
- Base Part Number: MT41J64M16
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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