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- Manufacturer No：MTFC4GMWDQ-3M AIT
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：MTFC4GMWDQ-3M AIT
- SKU：3933155
- Description：Not For New Designs PARALLEL BOTTOM Non-Volatile ic memory -40C~85C TA 2.7V 34359738368bit 14mm
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MTFC4GMWDQ-3M AIT Details
Not For New Designs PARALLEL BOTTOM Non-Volatile ic memory -40C~85C TA 2.7V 34359738368bit 14mm
MTFC4GMWDQ-3M AIT Specification Parameters
- Mounting Type: Surface Mount
- RoHS Status: RoHS Compliant
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Memory Width: 8
- Factory Lead Time: 13 Weeks
- Reach Compliance Code: compliant
- Number of Terminations: 100
- Memory Format: FLASH
- Terminal Position: BOTTOM
- Programming Voltage: 2.7V
- Memory Type: Non-Volatile
- Voltage - Supply: 2.7V~3.6V
- Operating Mode: SYNCHRONOUS
- Technology: FLASH - NAND
- Package / Case: 100-LBGA
- Memory Size: 32Gb 4G x 8
- Organization: 4GX8
- Number of Functions: 1
- Surface Mount: YES
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Packaging: Tray
- Operating Temperature: -40°C~85°C TA
- Terminal Pitch: 1mm
- Part Status: Not For New Designs
- Supply Voltage-Max (Vsup): 3.6V
- Supply Voltage-Min (Vsup): 2.7V
- Height Seated (Max): 1.4mm
- Width: 14mm
- Length: 18mm
- Parallel/Serial: PARALLEL
- Memory Interface: MMC
- Series: e?MMC?
- Memory Density: 34359738368 bit
- JESD-30 Code: R-PBGA-B100
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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